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Sanken electric |
4-circuit High-side Power Switch Array q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.5V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in overcurrent and thermal |
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Sanken electric |
2-Phase Stepper Motor Unipolar Driver SLA7027MU typ 10 VS =44V 24 VS =44V, IDSS=250 µA 0.85 ID=1A, AV S=14V 4 V DSS=100V, VS =44V 1.2 ID=1A 40 VIH=2.4V, VS=44V −0.8 V IL=0.4V, VS =44V 2 ID=1A 0.8 VDSS=100V 2 VDSS=100V 0.8 ID=1A 0.5 VS=24V, ID=0.8A 0.7 VS=24V, ID=0.8A 0.1 VS=24V, ID=0.8A |
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Sanken electric |
3-circuit High-side Power Switch Array q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.2V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in Zener diode in transisto |
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Sanken electric |
N-channel General purpose ID=2.5A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 2 4 9 11 1 5 8 12 3 6 7 10 Characteristic curves ID-VDS Characteristics (Typical) 10 10V 7V ID-VGS Characteristics (Typical) 10 RDS(ON)-ID Characteristics (Typical) 0 |
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Sanken electric |
N-channel General purpose C) 150 –40 to +150 * : VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15. sEquivalent circuit diagram 3 6 7 10 1 4 9 12 2 5 8 11 Characteristic curves ID-VDS Characteristics (Typical) 10 5.5V 10V 5V ID-VGS Characteristics |
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Sanken electric |
N-channel General purpose GS=2.2V VGS=2.2V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) FET 1 100 4V FET 2 200 4V FET 2 7 6 VGS=10V –40°C 4 4 4 °C 25°C (VDS=10V) 80 VGS=10V 150 (mΩ) ID (A) 60 (mΩ) 5 4 3 2 C – |
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Sanken electric |
5A 600V 4 circuits Thyristor array q5A 4 Thyristors combined one package qRepetitive peak off-state voltage: VDRM=600V qGate trigger current: IGT=10mA max 16.0± 0.2 13.0± 0.2 9.9± 0.2 External Dimensions (Unit: mm) φ 3.2± 0.15 31.0± 0.2 24.4± 0.2 16.4± 0.2 3.2± 0.15 × 3.8 4.8± 0.2 |
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Sanken electric |
3-Output Dropper/Switching Type • • • • 3 regulator ICs combined in 1 package Insulated single inline package Can be used with dropper type and switching type 3 independent circuits for input and output respectively. Internal dissipation can be reduced since different input voltage |
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Sanken electric |
3-Output Dropper/Switching Type • • • • 3 regulator ICs combined in 1 package Insulated single inline package Can be used with dropper type and switching type 3 independent circuits for input and output respectively. Internal dissipation can be reduced since different input voltage |
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Sanken electric |
3-Output Dropper/Switching Type • • • • 3 regulator ICs combined in 1 package Insulated single inline package Can be used with dropper type and switching type 3 independent circuits for input and output respectively. Internal dissipation can be reduced since different input voltage |
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Sanken electric |
4-Output/ Low Dropout Voltage Dropper Type for USB Hub • 4 regulators combined in one package • Insulated single inline package • SLA3005M/3006M with 5V/0.5A × 4 outputs and SLA3007M with 5V/0.5A × 3, 3.3V/0.5A × 1 outputs • Low dropout voltage: VDIF≤0.5V (at IO=0.5A) • Output-independent ON/OFF control |
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Sanken electric |
4-Output/ Low Dropout Voltage Dropper Type for USB Hub • 4 regulators combined in one package • Insulated single inline package • SLA3005M/3006M with 5V/0.5A × 4 outputs and SLA3007M with 5V/0.5A × 3, 3.3V/0.5A × 1 outputs • Low dropout voltage: VDIF≤0.5V (at IO=0.5A) • Output-independent ON/OFF control |
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Sanken electric |
4-Output/ Low Dropout Voltage Dropper Type for USB Hub • 4 regulators combined in one package • Insulated single inline package • SLA3005M/3006M with 5V/0.5A × 4 outputs and SLA3007M with 5V/0.5A × 3, 3.3V/0.5A × 1 outputs • Low dropout voltage: VDIF≤0.5V (at IO=0.5A) • Output-independent ON/OFF control |
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Sanken electric |
NPN Darlington With built-in avalanche diode C (A) VCE(sat)-IC Temperature Characteristics (Typical) 2 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characteristics (Typical) 4 (IC / IB=1000) (VCE= –4V) 3 VCE (sat) (V) VCE (sat) (V) 2 1 25°C 125°C Ta= –30° C IC (A) IC=4 |
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Sanken electric |
PNP Darlington With built-in flywheel diode hFE-IC Characteristics (Typical) 10000 hFE-IC Temperature Characteristics (Typical) 10000 5000 (VCE= –4V) typ (VCE= –4V) m IB= –4 5000 –1.2 mA –0.8mA IC (A) 1000 1000 hFE –4 –3 –2 –1 0 0 hFE °C 25 °C =1 75 °C Ta 25 –3 0° C –0.6mA 500 |
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Sanken electric |
P-channel General purpose diagram 3 6 7 10 1 5 8 12 2 4 9 11 Characteristic curves ID-VDS Characteristics (Typical) - –10 –10V –7V ID-VGS Characteristics (Typical) ---10 RDS(ON)-ID Characteristics (Typical) 0.25 (VDS= –10V) TC= –40°C 25°C (VGS= –10V) ---8 ---8 125 |
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Sanken electric |
N-channel With built-in flywheel diode ase, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150 qDiode for flyback voltage absorption Symbol VR VF IR trr min 120 Unit V V µA ns Conditions IR=10µA IF=1A VR=120V IF=± 100mA * : VDD=20V, L=1mH, ID=5A, u |
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Sanken electric |
N-channel General purpose etween fin and lead pin, AC) 150 –40 to +150 * : VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω,see Fig. E on page 15. sEquivalent circuit diagram 3 5 7 9 11 2 4 6 8 10 1 12 Characteristic curves ID-VDS Characteristics (Typical) 5 3V 2.8V ID-V |
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Sanken electric |
N-channel General purpose C) 150 –40 to +150 * : VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50Ω,see Fig. E on page 15. sEquivalent circuit diagram 3 6 7 10 1 4 9 12 2 5 8 11 Characteristic curves ID-VDS Characteristics (Typical) 10 10V 5V ID-VGS Characteristics (Typi |
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Sanken electric |
N-channel General purpose and lead pin, AC) 150 –40 to +150 * : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. sEquivalent circuit diagram 3 5 7 9 11 2 4 6 8 10 1 12 Characteristic curves ID-VDS Characteristics (Typical) 6V ID-VGS Characteristi |
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Desde 2024. D4U Semiconductor.
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