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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Silicon NPN Triple Diffused Planar Transistor .4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 1A I C – V CE Characteristics (Typical) 15 700mA 500mA 300mA 200mA 10 100mA 5 50mA IB=20mA 0 0 12 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation |
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Sanken Electric |
For Power Amplifier Power Transistor No. IC – VCE Characteristics (Typical) –50mA –5. 0m A –3 .0m A VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) –3 –15 IC – VBE Temperature Characteristics (Typical) (VCE = –4V) –15 – m 2.0 A –1.5m A |
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Sanken electric |
Silicon PNP Epitaxial Planar Transistor 4.0max 19.9±0.3 4.0 2.0 1.8 5.0±0.2 15.6±0.4 9.6 4.8±0.2 2.0±0.1 a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –10mA I |
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Sanken Electric |
PNP Transistor |
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Sanken Electric |
Silicon NPN triple diffusion planar type Transistor |
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Sanken electric |
Silicon NPN Transistor min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) 10mA 2.5mA I C – V CE Characteristics (Typical) 10 2mA 1.5mA 8 1.2mA 1mA 6 0.8m |
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Sanken electric |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications qBuilt-in temperature compensation diodes and one emitter resistor qReal time temperature compensation The temperature compensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly. qElimination |
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Sanken electric |
Silicon NPN Transistor b. Lot No. I C – V CE Characteristics (Typical) 5 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) I C – V BE T |
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Sanken electric |
Regulator • • • • TO-3P package 3-terminal regulator Output current: 2.0A Low dropout voltage: VDIF≤1V (at IO=2.0A) Built-in foldback overcurrent protection circuit sApplications • For stabilization of the secondary stage of switching power supplies • Electro |
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Sanken electric |
Darlington transistors qBuilt-in temperature compensation diodes and one emitter resistor qReal time temperature compensation The temperature compensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly. qElimination |
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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Off-Line Quasi-Resonant Switching Regulators Multi-Mode Control The operation mode switching with three steps according to load conditions achieves the TO-220F-6 optimal high efficiency and low noise power supply systems across the full load range. (The confirmation of product number is necessa |
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Sanken electric |
Silicon NPN Transistor ics (Typical) 3 A .0 0 2. A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =4V) 17 15 17 A 1.5 1.0 60 15 A 0mA Collector Current I C (A |
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Sanken electric |
Silicon NPN Transistor ±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) 400mA I C – V CE Characteristics (Typical) 10 300mA 200mA 150mA 8 100mA 75mA 6 50mA 4 20mA 2 IB=10mA 0 0 1 2 3 4 Collector-Emit |
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Sanken electric |
4-circuit High-side Power Switch Array q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.5V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in overcurrent and thermal |
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Sanken electric |
NPN Transistor 2SC2316 |
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Sanken electric |
Silicon NPN Transistor n (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 1m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Satur |
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Sanken electric |
High-side Power Switch q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in overcurrent and thermal protection circui |
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Sanken electric |
5-Phase Stepper Motor Driver current resistor Excitation signal 2-3 phase excitation Reference voltage Comparator amplifier Current controller Excitation signal amplifier Zener diode for canceling counter EMF ZD Rx Trigger pulse generator circuit M Counter EMF Canceller * I |
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Desde 2024. D4U Semiconductor.
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