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Sanken electric |
Silicon NPN Transistor min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) 10mA 2.5mA I C – V CE Characteristics (Typical) 10 2mA 1.5mA 8 1.2mA 1mA 6 0.8m |
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Sanken electric |
Silicon NPN Transistor 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) 10mA 2.5mA I C – V CE Characteristics (Typical) |
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Sanken electric |
Power Transistor ) 10mA 0.5 4 IC (A) IC (A) 6 5mA 4 3mA IB = 1mA 0.25 Ta = –55ºC 25ºC 75ºC 125ºC 3 2 1 Ta=55ºC 25ºC 75ºC 125ºC 2 0 0 1 2 3 4 5 0 1 5 10 50 100 400 0 0 0.5 1.0 1.5 VCE (V) IB (mA) VBE (V) s hFE — IC Characteristics (typ |
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Sanken electric |
Silicon NPN Transistor 6 IB2 (mA) –6 ton (µs) 0.6typ tstg (µs) 10.0typ tf (µs) 0.9typ Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5m 2. A 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E ( |
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Sanken electric |
2SD2389 0 to 30000) IB1 (mA) 6 IB2 (mA) –6 ton (µs) 0.6typ tstg (µs) 10.0typ tf (µs) 0.9typ Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5m 2. A 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturat |
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Desde 2024. D4U Semiconductor.
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