| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Sanken |
Fast Recovery Diode ● VRM------------------------------------------------------ 600 V ● IF(AV)------------------------------------------------------- 10 A ● VF--------------------------------------------------------1.98 V ● trr ------------------------------------------ |
|
|
|
|
Sanken electric |
Fast Recovery Diode ● VRM---------------------------------------------------- 200 V ● IF(AV)----------------------------------------------------- 10 A ● VF -----------------------------------------------------0.98 V ● trr1------------------------------------------------ |
|
|
|
|
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes 1.0 Forward Voltage VF (V) 1.2 1 5 10 Overcurrent Cycles 50 FMX-22S Tc—IF(AV) Derating 10 Average Forward Current I F (AV) (A) VF —IF Characteristics (Typical) 50 I FSM (A) I FMS Rating I FSM (A) Sinewave 10 Forward Current IF (A) 65 60 50 |
|
|
|
|
Sanken electric |
Fast Recovery Diode ● VRM---------------------------------------------------- 200 V ● IF(AV)----------------------------------------------------- 15 A ● VF -----------------------------------------------------0.98 V ● trr1------------------------------------------------ |
|
|
|
|
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes 120 130 140 Case Temperature Tc (°C) 150 0.001 0 0.2 0.4 0.6 0.8 1.0 Forward Voltage VF (V) 1.2 0 1 5 10 Overcurrent Cycles 50 FMX-G12S Tc—IF(AV) Derating 5 Average Forward Current I F (AV) (A) VF —IF Characteristics (Typical) 50 I FSM (A) |
|
|
|
|
Sanken electric |
Fast Recovery Diode ● VRM------------------------------------------------------ 200 V ● IF(AV)------------------------------------------------------- 20 A ● VF--------------------------------------------------------0.98 V ● trr1 ----------------------------------------- |
|
|
|
|
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes 0 Case Temperature Tc (°C) FMX-G22S Tc —IF(AV) Derating 10 8 Sinewave D.C. Average Forward Current IF(AV) (A) 6 t /T= 1/6 t /T= 1/3 t/T= 1/2 4 Tj =150ºC VR= 200V 2 t T 0 50 70 90 110 Case Temperature 130 Tc (°C) 150 External Dimensions (Un |
|
|
|
|
Sanken |
Fast Recovery Diode • Built-in SBD for an overheating detection together with a FRD in a TO220F package. (By combining together in a single package, FMXB-2102 excels in heat performance.) • High-precision heating protection without expensive temperature sensors such as |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRM------------------------------------------------------ 400 V ● IF(AV)------------------------------------------------------- 10 A ● VF--------------------------------------------------------1.50 V ● trr ------------------------------------------ |
|
|
|
|
Sanken electric |
Fast Recovery Diode ● VRM------------------------------------------------------ 200 V ● IF(AV)-------------------------------------------------------- 5 A ● VF--------------------------------------------------------0.98 V ● trr1 ----------------------------------------- |
|
|
|
|
Sanken electric |
Fast Recovery Diode ● VRM---------------------------------------------------- 200 V ● IF(AV)----------------------------------------------------- 10 A ● VF -----------------------------------------------------0.98 V ● trr1------------------------------------------------ |
|
|
|
|
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes 0 0.2 0.4 0.6 0.8 1.0 Forward Voltage VF (V) 1.2 0 1 5 10 Overcurrent Cycles 50 FMP-G12S 5 Average Forward Current I F (AV) (A) Tc—IF(AV) Derating t /T = 1/2 VF —I F Characteristics (Typical) 50 I FSM (A) I FMS Rating I FSM (A) 65 60 50 40 |
|
|
|
|
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes 120 130 140 Case Temperature Tc (°C) 150 0.001 0 0.2 0.4 0.6 0.8 1.0 Forward Voltage VF (V) 1.2 0 1 5 10 Overcurrent Cycles 50 FMX-G12S Tc—IF(AV) Derating 5 Average Forward Current I F (AV) (A) VF —IF Characteristics (Typical) 50 I FSM (A) |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRM---------------------------------------------------- 200 V ● IF(AV)----------------------------------------------------- 20 A ● VF -----------------------------------------------------1.20 V ● trr------------------------------------------------- |
|
|
|
|
Sanken electric |
Silicon Diode 1 ns trr2 ns 30 max. 25 max. 5 Thermal Resistance Rth (j-c) °C/W 4.0 max. Conditions IF=5.0A VR=VRM VR=VRM，Tj=150°C IF=IRP=500mA, Tj=25°C 90% Recovery point IF=500mA, IRP=1A, Tj=25°C 75% Recovery point Between Junction and case. 030901 1／4 614 |
|
|
|
|
Sanken |
Ultrafast Recovery Diode ● An excellent reverse recovery characteristic under high temperature ● An improved heat dissipation at a junction part thanks to a thinner die Die Structure: Silicon Planer Diode (FRD) Key Specifications Absolute maximum ratings Parameter Transien |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRM------------------------------------------------------ 600 V ● IF(AV)------------------------------------------------------- 10 A ● VF--------------------------------------------------------- 1.6 V ● trr1 ---------------------------------------- |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRM---------------------------------------------------- 200 V ● IF(AV)----------------------------------------------------- 10 A ● VF -----------------------------------------------------1.25 V ● trr1------------------------------------------------ |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRM------------------------------------------------------ 300 V ● IF(AV)------------------------------------------------------- 10 A ● VF--------------------------------------------------------1.30 V ● trr1 ----------------------------------------- |
|
|
|
|
Sanken |
Fast Recovery Diode ● VRSM -------------------------------------------------- 300 V ● IF(AV)----------------------------------------------------- 20 A ● VF ----------------------------------------------------- 0.97 V ● trr1 (IF = IRP) ----------------------------------- |
|
Desde 2024. D4U Semiconductor.
|