| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanken Electric |
PNP Transistor |
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Sanken Electric |
2SB1351 s) 1.5typ tf (µs) 0.6typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –20 0m V CE ( sat ) – I B Characteristi |
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Sanken electric |
Silicon PNP Transistor .2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +-00..12 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 2.0g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) IB= –2.3mA I C – V CE Characteristics (T |
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Sanken electric |
Silicon PNP Transistor 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –50mA I C – V CE |
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Sanken electric |
Silicon PNP Transistor ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A m –1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –3 I C – V |
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Sanken Electric |
2SB1686 0 to 30000) 2.54 3.9 B C E IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ I C – V CE Characteristics (Typical) A m –1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) |
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Sanken Electric |
2SB1559 to 20000), Y(15000 to 30000) IB1 (mA) –6 IB2 (mA) 6 ton (µs) 0.7typ tstg (µs) 3.6typ tf (µs) 0.9typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) m A V CE ( sat ) – I B Characteristics (Typical) Collector-E |
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Sanken Electric |
2SB1624 (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –6 A –5m A |
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Sanken electric |
2SB1258 6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3. – 4 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V |
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Sanken electric |
2SB1420 .1 b 2 3 1.05 +0.2 -0.1 0.65 +-00..12 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Type No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –40mA I C – V CE Characteristics (Typical) –26 –20mA –12mA –20 –6mA –3mA –10 IB |
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Sanken electric |
Silicon PNP Transistor 0.6typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –20 –6m A V CE ( sat ) – I B Characteristics (Typical) –3 |
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Sanken Electric |
Silicon NPN Triple Diffused Planar Transistor –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ 2.54 3.9 B C E I C – V CE Characteristics (Typical) A m –1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperatu |
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Sanken electric |
2SB1625 –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A m –1 V CE ( sa t ) – I B Characterist |
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Sanken electric |
2SB1588 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) mA V CE ( sat ) – I B Characteristics (Typical) Collector-Emit |
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Sanken electric |
Silicon PNP Transistor 6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3. – 4 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V |
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Sanken electric |
Silicon PNP Transistor (µs) 1.0typ tstg (µs) 3.0typ tf (µs) 1.0typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –25 –8 .0 mA –6 .0 m A V CE ( sat ) – I B Characteristics (Typical |
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Sanken electric |
Silicon PNP Transistor C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –26 0 –2 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics |
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Sanken electric |
Silicon PNP Transistor VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –6 A –5m A m 5mA –1 –0. A .4m |
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Sanken Electric |
Silicon PNP Epitaxial Planar Transistor .3 4.0 2.0 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –6 – 1 m – –A00. .54mmAA –0.3mA –0.2mA –4 IB= –0.1mA |
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Sanken electric |
Silicon PNP Transistor 6typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –20 0m V CE ( sat ) – I B Characteristics (Typical) –3 I C |
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Desde 2024. D4U Semiconductor.
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