| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanken |
Silicon PNP Transistor .9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) DC Current Gain hFE I C – V CE |
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Sanken electric |
2SA1908 .2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Type No. B C E b. Lot No. Collector Current IC(A) –350mA I C – V CE Characteristics (Typical) –8 –200mA –150mA –100mA –6 –75mA –50mA –4 –25mA –2 IB= –10mA 0 0 –1 |
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Sanken electric |
Silicon PNP Transistor CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) –2 A V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –2 (V C E = –4V) A 0m A 00 –1 –6 –3 –1 5mA 0m m Col |
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Sanken electric |
2SA1568 ) 0.4typ tf (µs) 0.2typ 2.54 3.9 B C E I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) –12 00 mA –15 0mA V CE ( sat ) – I B Characteristics (Typical) –1.4 I C – V BE Temperature Characteristics (Typic |
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Sanken electric |
Silicon PNP Epitaxial Planar Transistor I C – V CE Characteristics (Typical) –1. m 00 A V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –17 –15 Collector Current I C (A) (V C E = –4V |
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Sanken |
2SA1746 ±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 BC E Weight : Approx 6.5g a. Type No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) –12 –12mA –100mA –10 –70mA –8 –50mA –6 –30mA –4 IB= –10mA –2 0 0 –1 –2 –3 –4 –5 –6 Collector-E |
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Sanken electric |
Silicon PNP Transistor 5 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) –10 –400mA –300mA – 200 mA –1 5 0m A –8 –100mA –75mA –6 –50mA –4 –25mA |
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Sanken electric |
2SA1694 . b. Lot No. I C – V CE Characteristics (Typical) –8 50 V CE ( s a t ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –8 (V CE = –4V) –3 –2 0 0m m A – |
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Sanken |
Audio Amplification Transistor and Benefits Description ▪ Small package (TO-3P) By adapting the Sanken unique wafer-thinner technique, these ▪ High power handling capacity, 160 W PNP power transistors achieve power-up by decreasing thermal ▪ Improved sound output by reduced |
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Sanken electric |
2SA1386A µs) 0.7typ tf (µs) 0.2typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature |
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Sanken electric |
2SA1673 prox 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –1 A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) – 3 I C – V BE Temperature Characteristics (Typical) –15 (V C E = –4V) – |
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Sanken electric |
Silicon PNP Epitaxial Planar Transistor Lot No. 00 –4 –2 0 0m m A –16 0mA Collector Current I C (A) –8 0m A –6 –2 Collector Current I C (A) –8 mA –120 A 0 –1 0m Collector-Emitter Saturation Voltage V CE(s a t) (V ) –10 A –3 –10 –8 –6 –60mA –4 Tem p) Tem (Ca se ˚C |
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Sanken electric |
Silicon PNP Transistor – V CE Characteristics (Typical) A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E = –4V) – |
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Sanken electric |
Silicon PNP Transistor ● Complementary to 2SC3263 ● LAPT (Linear Amplifier Power Transistor) ● High Transition Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO----------------------------------------------------−230 V ● IC--------------------------------------- |
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Sanken electric |
Silicon PNP Transistor ● Complementary to 2SC3519 ● LAPT (Linear Amplifier Power Transistor) ● High Transition Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO----------------------------------------------------−160 V ● IC--------------------------------------- |
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Sanken electric |
Silicon PNP Transistor 5±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) –6 –200mA –150mA –100mA –5 –80mA –4 –50mA –3 –30mA –20mA –2 IB= –10mA –1 0 0 –1 |
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Sanken electric |
2SA1860 ) 0.2typ 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –14 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m mA mA mA 00 500 400 00 – –3 –6 – V CE ( sat ) – I B Characteristics (Typical) – |
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Sanken electric |
2SA1494 V CE Characteristics (Typical) –17 A .5 –1 V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –17 –15 Collector Current I C (A) (V C E = –4V) –1A |
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Sanken |
Audio Amplification Transistor and Benefits Description ▪ Small package (TO-3P) By adapting the Sanken unique wafer-thinner technique, these ▪ High power handling capacity, 160 W PNP power transistors achieve power-up by decreasing thermal ▪ Improved sound output by reduced |
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Sanken electric |
Silicon PNP Transistor Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) –17 A –3 . –2 V CE ( sat ) – I B Characteristics (Typical) – 3 I C – V BE Temperature Characteristics (Typical) (V C E = –4V) –17 –15 Collector Current I C (A) .0 0A |
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Desde 2024. D4U Semiconductor.
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