Sangdest Microelectronics MBR Hoja de datos

No.	parte #	Fabricante	Descripción
1	MBRB2045CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
2	MBRF20150CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 ℃ TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a
3	MBR15200	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •
4	MBRF2060CT	Sangdest Microelectronics	SCHOTTKY RECTIFIER • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a
5	MBRD835	Sangdest Microelectronics	SCHOTTKY RECTIFIER  150℃ TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and
6	MBRF2080CTL	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 ℃ TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a
7	MBR20200CT-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
8	MBRD660CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
9	MBR30120CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 175 ℃ TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a
10	MBR10150CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
11	MBRB1090CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER Applications  150 C TJ operation    Center tap configuration    Low forward voltage drop    High purity, high temperature epoxy encapsulation for   enhanced mechanical strength and moisture resistance   High frequency operation
12	MBRB1090CT-G	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
13	MBR3035WT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggednes
14	MBR2535CT	Sangdest Microelectronics	SCHOTTKY RECTIFIER LKLLKJHYJ, TO-220AB  150C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced  mechanical strength and moisture resistance  High frequency operation  Guard ring f
15	MBRD10200	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
16	MBR745	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
17	MBR30200CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
18	MBRB2060CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
19	MBRD2045CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness
20	MBRD5100	Sangdest Microelectronics	SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness