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Samsung semiconductor TL7 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
K4S280432F-TL75

Samsung semiconductor
128Mb F-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
2
K4S280832F-TL75

Samsung semiconductor
128Mb F-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
3
K4S281632F-TL75

Samsung semiconductor
128Mb F-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
• All inputs are
Datasheet
4
K4S560432E-TL75

Samsung semiconductor
256Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
5
K4S560832E-TL75

Samsung semiconductor
256Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
6
K4S561632E-TL75

Samsung semiconductor
256Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
7
K4S640432H-TL75

Samsung semiconductor
64Mb H-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
8
K4S640832F-TL75

Samsung semiconductor
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL




• JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
Datasheet
9
TL7231MD

Samsung semiconductor
FULL LAYER-III ISO/IEC 11172-3 AUDIO DECODER
as specified in ISO/IEC standard. Since it integrated onchip ADC and on-chip DAC, it can provide you more small and cheaper solution for MP3 player application. It is designed to be well suited for portable audio appliances. TL7231MD receives the in
Datasheet
10
TL7232MD

Samsung semiconductor
FULL LAYER- ISO/IEC 11172-3 AUDIO DECODER
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Datasheet
11
K4S280432E-TL75

Samsung semiconductor
128Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
• All inputs are
Datasheet
12
K4S280832E-TL75

Samsung semiconductor
128Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
• All inputs are
Datasheet
13
K4S281632B-TL75

Samsung semiconductor
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL




• JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
Datasheet
14
K4S281632C-TL75

Samsung semiconductor
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
15
K4S281632D-TL75

Samsung semiconductor
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
16
K4S281632E-TL75

Samsung semiconductor
128Mb E-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
• All inputs are
Datasheet
17
K4S511632M-TL75

Samsung semiconductor
512Mbit SDRAM

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
18
K4S640832E-TL75

Samsung semiconductor
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL




• JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All in
Datasheet
19
K4S640832H-TL75

Samsung semiconductor
64Mb H-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet
20
K4S641632H-TL70

Samsung semiconductor
64Mb H-die SDRAM Specification

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All
Datasheet



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