| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Samsung semiconductor |
128Kx8 High Speed Static RAM • Fast Access Time 12, 15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A - 12 : 170mA(Max.) KM681002A - 15 : 165mA(Max.) KM681002A - 20 : 160mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatib |
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Samsung Semiconductor |
1M x 8-Bit Low Power and Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The KM688100 families are |
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Samsung Semiconductor |
CMOS SRAM • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) Operating KM641003C - 12 : 70mA(Max.) KM641003C - 15 : 68mA(Max.) KM641003C - 20 : 65mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible In |
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Samsung Semiconductor |
CMOS SRAM • • • • • • GENERAL DESCRIPTION The KM68FU1000A families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The f |
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Samsung semiconductor |
CMOS SRAM ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which op |
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Samsung semiconductor |
Low Power and Low Voltage CMOS Static RAM • Process Technology : TFT • Organization : 32Kx8 • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-SOP-450 28-TSOP1-0813. |
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Samsung semiconductor |
Low Power AND Low Vcc CMOS Static RAM SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7µm CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V ± 0.3V KM62U256C family : 3.0V ± 0.3V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible |
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Samsung Semiconductor |
CMOS SRAM • Fast Access Time 15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max.) KM641001B/BL - 20 : 118mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inp |
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Samsung Semiconductor |
CMOS SRAM • Process Technology : Full CMOS • Organization : 128K x8 bit • Power Supply Voltage KM68FV1000 Family : 3.0V ~ 3.6V KM68FS1000 Family : 2.3V ~ 3.3V KM68FR1000 Family : 1.8V ~ 2.7V • Low Data Retention Voltage : 1.5V(Min) • Three state output and TTL |
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Samsung Semiconductor |
CMOS SRAM • Process Technology : Full CMOS • Organization : 256Kx8 • Power Supply Voltage KM68FV2000 Family : 3.0 ~ 3.6V KM68FS2000 Family : 2.3 ~ 3.3V KM68FR2000 Family : 1.8 ~ 2.7V • Low Data Retention Voltage : 1.5V(Min) • Three state output and TTL Compati |
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Samsung semiconductor |
32Kx8 Bit High-Speed CMOS Static RAM • Fast Access Time 10, 12, 15ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) Operating KM68257E - 10 : 80mA(Max.) KM68257E - 12 : 80mA(Max.) KM68257E - 15 : 80mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inp |
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Samsung semiconductor |
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM • Process Technology : Poly Load • Organization : 128Kx8 • Power Supply Voltage : KM68V1000B family : 3.0~3.6V KM68U1000B family : 2.7~3.3V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 32-SOP, 32-TSO |
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Samsung semiconductor |
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM • Process Technology : Poly Load • Organization : 128Kx8 • Power Supply Voltage : KM68V1000B family : 3.0~3.6V KM68U1000B family : 2.7~3.3V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 32-SOP, 32-TSO |
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Samsung Semiconductor |
32K X 8 Bit High Speed CMOS Static RAM • Fast Access Time 15, 17ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 0.1mA(Max.) Operating KM68V257C - 15 : 90mA(Max.) KM68V257C - 17 : 80mA(Max.) • Single 3.3±0.3V Power Supply • TTL Compatible Inputs and Outputs • Fully Sta |
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Samsung Semiconductor |
32K X 8 Bit High Speed CMOS Static RAM • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.) • Single 3.3 ±0.3V Power |
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Samsung semiconductor |
256Kx16 bit Low Power CMOS Static RAM • Process Technology : TFT • Organization : 256Kx16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The KM616V4000B fami |
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Samsung Semiconductor |
1M X 4 Bit (with Oe)high-speed CMOS Static RAM • Fast Access Time 15,17,20ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002A - 15 : 150mA(Max.) KM644002A - 17 : 145mA(Max.) KM644002A - 20 : 140mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatibl |
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Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM • Fast Access Time 10,12,15ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002B - 10 : 195mA(Max.) KM644002B - 12 : 190mA(Max.) KM644002B - 15 : 185mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatibl |
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Samsung Semiconductor |
1M X 4 Bit (with Oe)high Speed CMOS Static RAM • Fast Access Time 10,12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002C - 10 : 160mA(Max.) KM644002C - 12 : 150mA(Max.) KM644002C - 15 : 140mA(Max.) KM644002C - 20 : 130mA(Max.) • Single 5.0V |
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Samsung semiconductor |
64Kx8 bit Low Power CMOS Static RAM • Process Technology: Poly Load • Organization: 64Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-SOP-525, 32-TSOP1-0820F CMOS SRAM GENERAL DESCRIPTION The KM68512 |
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Desde 2024. D4U Semiconductor.
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