Samsung semiconductor K6X Hoja de datos

No.	parte #	Fabricante	Descripción
1	K6X1008T2D	Samsung semiconductor	128Kx8 bit Low Power CMOS Static RAM
2	K6X4008C1F	Samsung semiconductor	512Kx8 bit Low Power full CMOS Static RAM
3	K6X4016T3F	Samsung semiconductor	256Kx16 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: Full CMOS • Organization: 256K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 2V(Min) • Three State Outputs • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X4016T3F families are fabricated
4	K6X0808C1D	Samsung semiconductor	32Kx8 bit Low Power CMOS Static RAM • Process Technology: Full CMOS • Organization: 32K x 8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESC
5	K6X0808T1D	Samsung semiconductor	32Kx8 bit Low Power CMOS Static RAM • Process Technology: Full CMOS28 • Organization: 32K x 8 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state outputs • Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESCRIPTION The K6X0808T1D famil
6	K6X4016C3F	Samsung semiconductor	256Kx16 bit Low Power full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256Kx16 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL compatible • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X4016C3F familie
7	K6X4008T1F	Samsung semiconductor	512K x 8 bit Low Power and Low Voltage CMOS Static RAM
8	K6X1008C2D	Samsung semiconductor	128Kx8 bit Low Power CMOS Static RAM
9	K6X8008C2B	Samsung semiconductor	1Mx8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X8008C2B familie
10	K6X8008T2B	Samsung semiconductor	CMOS SRAM
11	K6X8016C3B	Samsung semiconductor	512Kx16 bit Low Power Full CMOS Static RAM
12	K6X8016T3B	Samsung semiconductor	512Kx16 bit Low Power Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state outputs • Package Type: 44-TSOP2-400F GENERAL DESCRIPTION The K6X8016T3B families are fabricated by SAMSU