Samsung KM6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	KM681002AI	Samsung semiconductor	128Kx8 High Speed Static RAM • Fast Access Time 12, 15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A - 12 : 170mA(Max.) KM681002A - 15 : 165mA(Max.) KM681002A - 20 : 160mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatib
2	KM62256BL-L	Samsung	32K x 8-Bit High Speed CMOS Static RAM
3	KM62256CLI	Samsung	32K x 8 bit Low Power CMOS Static RAM • Process Technology : 0.7µm CMOS • Organization : 32Kx8 • Power Supply Voltage : Single 5V±10% • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-DIP-600, 28-SOP-450, 28-TSOP1 -0813.4F/R GENERAL DESCR
4	KM688100	Samsung Semiconductor	1M x 8-Bit Low Power and Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The KM688100 families are
5	KM641003C	Samsung Semiconductor	CMOS SRAM • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) Operating KM641003C - 12 : 70mA(Max.) KM641003C - 15 : 68mA(Max.) KM641003C - 20 : 65mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible In
6	KM68FU1000A	Samsung Semiconductor	CMOS SRAM • • • • • • GENERAL DESCRIPTION The KM68FU1000A families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The f
7	KM684002E	Samsung	512Kx8 Bit High Speed Static RAM ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operate
8	KM62256AL	Samsung Electronics	32K X 8-Bit Static RAM
9	KM62256AL-L	Samsung Electronics	32K X 8-Bit Static RAM
10	KM62256CLE	Samsung	32K x 8 bit Low Power CMOS Static RAM • Process Technology : 0.7µm CMOS • Organization : 32Kx8 • Power Supply Voltage : Single 5V±10% • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-DIP-600, 28-SOP-450, 28-TSOP1 -0813.4F/R GENERAL DESCR
11	KM62256CLI-L	Samsung	32K x 8 bit Low Power CMOS Static RAM • Process Technology : 0.7µm CMOS • Organization : 32Kx8 • Power Supply Voltage : Single 5V±10% • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-DIP-600, 28-SOP-450, 28-TSOP1 -0813.4F/R GENERAL DESCR
12	KM644002L	Samsung	1M X 4 Bit (with Oe) high-speed CMOS Static RAM
13	KM644002	Samsung	1M X 4 Bit (with Oe) high-speed CMOS Static RAM
14	KM684000	Samsung	524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
15	KM684000C	Samsung	512Kx8 bit Low Power CMOS Static RAM • Process Technology: TFT • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The
16	KM684002	Samsung	512Kx8 Bit High Speed Static RAM(5V Operating) / Revolutionary Pin out ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operate
17	KM62256D	Samsung	32K x 8 bit Low Power CMOS Static RAM • • • • • • Process Technology : TFT Organization : 32Kx8 Power Supply Voltage : 4.5~5.5V Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R CMOS SRAM GENERAL DESCRIP
18	KM6161002B	Samsung	CMOS SRAM • Fast Access Time 8,10,12ns(Max.) • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM6161002B - 8 : 200 mA(Max.) KM6161002B - 10 : 195 mA(Max.) KM6161002B - 12 : 190 mA(Max.) • Single 5.0V ±10% Power Supply • TTL Co
19	KM6164002	Samsung semiconductor	CMOS SRAM ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which op
20	KM62V256D	Samsung semiconductor	Low Power and Low Voltage CMOS Static RAM • Process Technology : TFT • Organization : 32Kx8 • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-SOP-450 28-TSOP1-0813.