Samsung Electronics K6F Hoja de datos

No.	parte #	Fabricante	Descripción
1	K6F1008R2M	Samsung Electronics	SRAM • Process Technology: Full CMOS • Organization: 128K x8 bit • Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V • Low Data Retention Voltage: 1.5V(Min) • Three state output and TTL Compa
2	K6F4016R4G	SAMSUNG Electronics	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • • • • • • CMOS SRAM www.DataSheet4U.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1
3	K6F1008S2M	Samsung Electronics	SRAM • Process Technology: Full CMOS • Organization: 128K x8 bit • Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V • Low Data Retention Voltage: 1.5V(Min) • Three state output and TTL Compa
4	K6F1008V2M	Samsung Electronics	SRAM • Process Technology: Full CMOS • Organization: 128K x8 bit • Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V • Low Data Retention Voltage: 1.5V(Min) • Three state output and TTL Compa