SamHop STM Hoja de datos

No.	parte #	Fabricante	Descripción
1	STM9435	SamHop Microelectronics	P-Channel MOSFET V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -5V, ID = - 5.3A Min Typ C Max U
2	STM4639	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Procteced D D D 5 6 7 8 4 3 2 1 G S S S SO-8 1 D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG
3	STM105N	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
4	STM6962	SamHop Microelectronics	Dual N-Channel MOSFET ( m Ω ) Max ID 6.5A RDS(ON) Super high dense cell design for low RDS(ON). 36 @ VGS = 10V 42 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unles
5	STM6966	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 4.5A R DS(ON) (m Ω) Max 80 @ VGS=10V 110 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unle
6	STM122N	SamHop Microelectronics	Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3.4A R DS(ON) (m ) Max 100 @ VGS=10V 125 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless othe
7	STM102D	SamHop	Dual Enhancement Mode Field Effect Transistor er 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gat
8	STM4806	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Volta
9	STM8405	SamHop Microelectronics	Dual E nhancement Mode Field E ffect Transistor CAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 22V, V DS = 0V V DS = V GS , ID = 25
10	STM4800A	SamHop Microelectronics	N-Channel E nhancement Mode Field Effect Transistor S (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 7A V DS = 10V, V GS = 10V V DS = 10V, ID = 8A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.6 29 2
11	STM4410A	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor ition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 9A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 9A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 8.5 16 20 13 1500 380 240 3 V
12	STM8500A	SamHop Microelectronics	Dual Enhancement Mode Field Effect Transistor bient a R JA 1 62.5 C /W S T M8500A N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44
13	STM101N	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Typ 170 @ VGS=10V 260 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ,
14	STM9926	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V
15	STM121N	SamHop Microelectronics	Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2.8A R DS(ON) (m ) Max 155 @ VGS=10V 192 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless othe
16	STM8458	SamHop	Dual Enhancement Mode Field Effect Transistor el ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current I
17	STM4840	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Volta
18	STM132N	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Conti
19	STM6920	SamHop Microelectronics	Dual N-Channel E nhancement Mode Field Effect Transistor e noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS
20	STM6920A	SamHop Microelectronics	Dual N-Channel E nhancement Mode Field Effect Transistor ed) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS = 5V, V