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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 20A R DS(ON) (m Ω) Max 28 @ VGS=10V 38 @ VGS=4.5V G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor ise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 6A V |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 245 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS V |
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SamHop Microelectronics |
P-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS |
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SamHop Microelectronics |
N-Channel Logic Level E nhancement Mode Field Effect Transistor nt 1 R JC R JA 3 50 C /W C /W S T U/D3525NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = |
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SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor unction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U407D N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor R JA 3 50 C /W C /W S T U/D5025NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 20V, V |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor AR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RA |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S a Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 8A V DS = 10V, V GS = 10V V DS = |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD T |
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Desde 2024. D4U Semiconductor.
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