SamHop Microelectronics STF Hoja de datos

No.	parte #	Fabricante	Descripción
1	STF2455	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ,
2	STF2456	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
3	STF2458	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact G1 S1 T DF N 2X3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T
4	STF8234	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ,
5	STF8211	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T DF N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RAT
6	STF8209A	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
7	STF06N20	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ,
8	STF8810	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
9	STF8204	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RA
10	STF2454	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
11	STF2458A	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
12	STF443	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Paramete
13	STF1016C	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parame
14	STF8235A	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 PIN 1 D1/D2 (Bottom view) G2 S2 S2 TDFN 2X5 G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C u
15	STF8209	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RA
16	STF8233	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) G1 3 S1 2 T DF N 2X3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATI
17	STF2454A	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS (
18	STF2459A	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 3 2 1 4 G2 5 6 S2 S2 T DF N 2X5 (Bottom view) S1 ABSOLUTE MAXIMUM RATINGS ( T
19	STF8236	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PIN 1 S1 S1 G1 D1/D2 S2 S2 G2 DFN 2X2 Bottom Drain Contact (D1/D2) G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unle