SamHop Microelectronics STC Hoja de datos

No.	parte #	Fabricante	Descripción
1	STC2200	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor ain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2A V GS = 2.5V, ID=
2	STC8697	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S mini 8 PIN 1 D2 5 D2 6 D1 7 D1 8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Vo
3	STC9204	SamHop Microelectronics	Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 PIN 1 S1 D1/D2 G2 S2 S2 TDFN 2X3 (Bottom view) Bottom Drain Contact (D1/D2) G1 3 4 G2 S1 2 S1 1 5 S2 6 S2 ABSOLUTE MAXIMUM RATI
4	STC2201	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor age Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.0A V GS