SamHop Microelectronics SDT Hoja de datos

No.	parte #	Fabricante	Descripción
1	SDT452AP	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor s otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS
2	SDT01N02	SamHop Microelectronics	N-Channel MOSFET CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b 200 1
3	SDT02N02	SamHop Microelectronics	N-Channel MOSFET ACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b 200 1 ±100
4	SDT03N04	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor S Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V 400 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VD