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C-Band Internally Matched FET High Output Power : P1dB=42.5dBm(typ.) High Gain : G1dB=8.0dB(typ.) High P.A.E. : hadd=37%(typ.) Broad Band : 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM7785-16F is a power GaAs FET that is interna |
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C-Band Internally Matched FET ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=9.0dB(typ.) ・High P.A.E. ： ηadd=38%(typ.) ・Broad Band ： 7.1 - 7.9GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The ELM7179-10F is a power GaAs FET that is inte |
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Ku-Band Internally Matched FET •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.) •Broad Band: 13.75 to 14.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The ELM1314-30F/001 is a power GaAs FET that is i |
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C-Band Internally Matched FET •High Output Power: P1dB=45.5dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=35%(Typ.) •Broad Band: 7.7 to 8.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The ELM7785-35F is a power GaAs FET that is internal |
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C-Band Internally Matched FET •High Output Power: P1dB=48.0dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=37%(Typ.) •Broad Band: 7.7 to 8.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The ELM7785-60F is a power GaAs FET that is internal |
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Ku-Band Internally Matched FET •High Output Power: P1dB=44.5dBm(Typ.) •High Gain: G1dB=6.0dB(Typ.) •High PAE: ηadd=22%(Typ.) •Broad Band: 14.00 to14.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package Ku-Band Internally Matched FET DESCRIPTION The ELM1414-30F/0 |
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C-Band Internally Matched FET High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally ma |
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C-Band Internally Matched FET High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matche |
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C-Band Internally Matched FET High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broad Band: 7.1 to 7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matche |
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SUMITOMO |
C-Band Internally Matched FET High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-7PS is a power GaAs FET that is internally matched |
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SUMITOMO |
C-Band Internally Matched FET High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched |
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SUMITOMO |
C-Band Internally Matched FET High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched f |
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C-Band Internally Matched FET High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=11.0dB (Typ.) High PAE: hadd=36% (Typ.) Frequency Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally ma |
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C-Band Internally Matched FET High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-7PS is a power GaAs FET that is internally matche |
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SUMITOMO |
C-Band Internally Matched FET ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION The ELM5964-10F is a power GaAs FET that is internally m |
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SUMITOMO |
C-Band Internally Matched FET High Output Power: P1dB=42.5dBm (Typ) High Gain: G1dB=10.0dB (Typ.) High PAE: add=40 %( Typ.) Frequency Band: 5.9~6.4GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package C-Band Internally Matched FET ELM5964-16F DESCRIPTIO |
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SUMITOMO |
C-Band Internally Matched FET ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: hadd=36%(Typ.) ・Broad Band: 6.4～7.2GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION The ELM6472-10F is a power GaAs FET that is internally ma |
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SUMITOMO |
C-Band Internally Matched FET High Output Power: P1dB=42.5dBm (Typ) High Gain: G1dB=9.5dB (Typ.) High PAE: add=40 %( Typ.) Broad Band: 6.4~7.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The ELM6472-16F is a power GaAs FET that is inte |
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SUMITOMO |
C-Band Internally Matched FET ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.) ・Broad Band ： 7.7 - 8.5GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The ELM7785-10F is a power GaAs FET that is inte |
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Desde 2024. D4U Semiconductor.
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