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STMicroelectronics |
STW45NM50 TYPE STW45NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 45 A VDSS (@Tjmax) 550V s s TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCE |
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STMicroelectronics |
STW45NM60 Type STW45NM60 VDSS (@Tjmax) 650V RDS(on) < 0.11Ω ID 45A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description The MDmesh™ is a new revolutionary Power MO |
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STMicroelectronics |
IGBT ■ Improved Eoff at elevated temperature ■ Low VF soft recovery antiparallel diode Applications ■ Welding ■ Induction heating ■ Resonant converters Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT wit |
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STMicroelectronics |
N-CHANNEL MOSFET Order code STW45N60DM2AG VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID 34 A PTOT 250 W 3 2 1 TO-247 Figure 1: Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate |
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STMicroelectronics |
N-CHANNEL MOSFET Order code VDS RDS(on) max. ID STP45N60DM6 STW45N60DM6 600 V 0.099 Ω 30 A 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Fast-recovery body diode Lower RDS(on) x area vs previous generation Low gate charge, input cap |
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STMicroelectronics |
N-channel Power MOSFET 1 3 2 1 TO-3PF 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 Ω 35 A STWA45N65M5 • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching pe |
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STMicroelectronics |
N-channel Power MOSFET 1 3 2 1 TO-3PF 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 Ω 35 A STWA45N65M5 • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching pe |
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Desde 2024. D4U Semiconductor.
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