| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
STW13009 ■ ■ ■ ■ Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Application ■ Switch mode power supplies TO-247 Description The device is manufactured using high vo |
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STMicroelectronics |
STW13NK60Z Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W ■ GATE CHARGE MINIMIZED ■ VERY LOW |
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STMicroelectronics |
STW13NB60 DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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STMicroelectronics |
High Voltage Fast Switching NPN Power Transistor ■ ■ ■ ■ Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Application ■ Switch mode power supplies TO-247 Description The device is manufactured using high vo |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STW13NK100Z ■ ■ ■ ■ ■ VDSS (@Tjmax) 1000 V RDS(on) ID PW < 0.70 Ω 13 A 350W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Descripti |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max ID STP13N60M2 STU13N60M2 650 V 0.38 Ω 11 A STW13N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applicat |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS RDS(on) ID PTOT STB13N80K5 190 W STF13N80K5 800 V STP13N80K5 STW13N80K5 0.45 Ω 12 A 35 W 190 W • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switchin |
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STMicroelectronics |
STW13NB60 GRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM ( •) D |
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STMicroelectronics |
STW13NK80Z Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s) ■ Very good manufacturing repeatibility ucDescription rodThe SuperM |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s) ■ Very good manufacturing repeatibility ucDescription rodThe SuperM |
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STMicroelectronics |
N - CHANNEL PowerMESH MOSFET DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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STMicroelectronics |
N - CHANNEL PowerMESH MOSFET DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) <0.32Ω <0.32Ω <0.32Ω <0.32Ω <0.32Ω ID 3 STB13NM50N STB13NM50N-1 STF13NM50N STP13NM50N STW13NM50N 12A 12A 12A(1) 12A 12A TO-220 1 2 3 12 I²PAK TO-247 3 1 2 3 1 1. Lim |
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Desde 2024. D4U Semiconductor.
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