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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY Parameter Drain-Source Breakdown Voltage Drain-Source Voltage (OFF STATE) Drain-Source Voltage (Output Shorted to Ground) Output Current (cont.) Reverse Output Current Input Current Input Voltage Status Output Voltage Reverse Supply Voltage Status C |
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STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Type VDSS RDS(on) In (1) VCC VN21 60 V 0.05 Ω 7 A 26 V )Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of 1 |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY mbol V( BR)DSS IO UT IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY I N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output current Input Current Reverse Supply Voltage Status Current (sink) Electrostatic discharge (1.5 k Ω , 100 pF) Power Dissipation at T |
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Desde 2024. D4U Semiconductor.
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