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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY l V( BR)DSS IO UT IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Di |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY ESD P tot Tj T stg Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c ≤ 25 C o Unit PPAK 60 6 -6 ± 10 |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY n-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current (sink) Electrostatic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Tempe |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY oltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c ≤ 25 C o Unit PPAK 60 6 -6 ± 10 -4 ± 10 2000 58 -40 to 150 -55 to 150 46 V |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY s) Supply Voltage (pulsed) Reverse Supply Voltage Status Current Electrostat ic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C o Parameter Drain-Source Breakdown Voltage Value Internally Clamped 12 -12 ± 10 40 60 -4 ± 10 2000 52 -40 to |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY ply Voltage Status Current Electrostatic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Temperature o Valu e 60 13 -13 ± 10 -4 ± 10 2000 56 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C C |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Type VDSS RDS(on) In(1) VCC VN03 60 V 0.5 Ω 0.7 A 26 V )1. In= nominal current according to ISO definition for high t(sside automotive switch. duc ■ Maximum continuous output current(a) : 4A @ roTc= 25°C P ■ 5V logic level compatible input te ■ |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY IN VCC VCC -V CC I STAT V ESD P tot Tj T stg ESB Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Supply Voltage (continuous) Supply Voltage (pulsed) Reverse Supply Voltage Status Current Electrost |
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STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c ≤ |
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STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Type VDSS RDS(on) In(1) VCC VN06 60 V 0.18 Ω 1.9 A 26 V )1. In= nominal current according to ISO definition for high t(sside automotive switch. duc ■ Maximum continuous output current(a) : 9A @ roTc= 85°C P ■ 5V logic level compatible input te ■ |
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Desde 2024. D4U Semiconductor.
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