| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2931 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symbol V (BR)DSS I DSS I GSS V GS(Q) V DS(ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs Max. O perating Junction Temperature Storage Temperature Value 125 125 ± 20 20 389 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 0.45 |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs k with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/13 SD2932 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS(on) gfs C ISS C OSS C RSS V GS = 0 V V GS = 0 V V GS = |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2918 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY 65 ± 20 5 93 200 -65 to 200 Uni t V V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 1.4 0.45 o o C/W C/W * Determined using a flat aluminum or copper heatsink w |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY ce Value 65 65 ± 20 5 93 200 -65 to 200 Uni t V V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 1.4 0.50 o o C/W C/W * Determined using a flat aluminum or copp |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.2 0.45 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 o |
|
|
|
|
STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY t V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.1 0.5 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow |
|
Desde 2024. D4U Semiconductor.
|