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STMicroelectronics |
High temperature 16A 600V TO220FP thyristor SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000V/µs up to 150 °C • Gate triggering current IGT = 10 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK®2 compliant • Complie |
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STMicroelectronics |
TO220FH 1 (±0.008) 0.154 0.087 0.030 (±0.004) 2/2 |
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STMicroelectronics |
High temperature 16A 600V TO220 thyristor SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/µs up to 150 °C • Gate triggering current IGT = 10 mA • Blocking voltage VDRM/VRRM = 600 V • High turn on current rise dI/dt: 100 A/µs • ECOPACK®2 compliant component Appli |
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STMicroelectronics |
High temperature 30A 600V TO220 insulated thyristor SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/µs up to 150 °C • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK2 compliant • Insulated package TO-220AB: – Insulated volta |
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STMicroelectronics |
High temperature 30A 600V TO220 thyristor SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000 V/µs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK2 compliant Applicati |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STO24N60M6 600 V 190 mΩ 17 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applicatio |
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Desde 2024. D4U Semiconductor.
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