STMicroelectronics TL4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	TL431AI	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
2	TL431AC	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
3	TL431C	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
4	TL431	STMicroelectronics	Automotive adjustable voltage reference • AEC-Q100 qualified • Adjustable output voltage: 2.5 to 36 V • Sink current capability: 1 to 100 mA • Typical output impedance: 0.22 Ω • 0.5% voltage precision only on the TL431B version • 1% and 2% voltage precision • Automotive temp. range -40 °C
5	STL4LN80K5	STMicroelectronics	N-channel Power MOSFET Order code STL4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 2A  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 % avalanche tested  Zener-protected Applications  Switching applications Descripti
6	TL432	STMicroelectronics	Automotive adjustable voltage reference • AEC-Q100 qualified • Adjustable output voltage: 2.5 to 36 V • Sink current capability: 1 to 100 mA • Typical output impedance: 0.22 Ω • 0.5% voltage precision only on the TL431B version • 1% and 2% voltage precision • Automotive temp. range -40 °C
7	STL45N65M5	STMicroelectronics	N-channel Power MOSFET Order code STL45N65M5 VDS @ TJmax. 710 V RDS(on) max. 0.086 Ω ID PTOT 22.5 A 160 W  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100% avalanche tested Applications  Switching applications De
8	STL45N60DM6	STMicroelectronics	N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. STL45N60DM6 600 V 0.110 Ω • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Ze
9	STL4P3LLH6	STMicroelectronics	P-Channel Power MOSFET 1 2 3 Order code VDS RDS(on) max. ID 1 2 3 6 5 4 PowerFLAT 2x2 STL4P3LLH6 30 V 56 mΩ 4A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss 1(D) 2(D) 3(G) Applications • Switching a
10	STL4P2UH7	STMicroelectronics	P-CHANNEL POWER MOSFET 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Order code STL4P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 V • Ultra logic level • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate dri
11	TL431I	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
12	TL432I	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
13	TL431B	STMicroelectronics	Automotive adjustable voltage reference  AEC-Q100 qualified  Adjustable output voltage: 2.5 to 36 V  Sink current capability: 1 to 100 mA  Typical output impedance: 0.22 Ω  0.5% voltage precision only on the TL431B version  1% and 2% voltage precision  Automotive temp. range -40 °C
14	STL4N80K5	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6,
15	STL40N10F7	STMicroelectronics	N-channel Power MOSFET Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applicati
16	STL42P6LLF6	STMicroelectronics	P-channel Power MOSFET Order code V DS STL42P6LLF6 -60 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max 26 mΩ ID -42 A Applications • Switching applications Description This device is a P-channel
17	STL40DN3LLH5	STMicroelectronics	Dual N-channel Power MOSFET Order code STL40DN3LLH5 VDS 30 V RDS(on) max. ID 0.018 Ω 40 A Figure 1. Internal schematic diagram • AEC-Q101 qualified • Low on-resistance • High avalanche ruggedness • Low gate drive power loss • Wettable flank package Applications • Switching
18	STL4N10F7	STMicroelectronics	N-CHANNEL POWER MOSFET Order code VDS STL4N10F7 100 V • Excellent FoM (figure of merit) • Low Crss/Ciss ration for EMI immunity • High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A Applications • Switching applications Description This N-channel Power MOSFET ut
19	STL42P4LLF6	STMicroelectronics	P-CHANNEL POWER MOSFET Order code VDS STL42P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 18 mΩ ID 42 A PTOT 75 W Applications • Switching applications AM01475v4 Description This d
20	STL45P3LLH6	STMicroelectronics	P-CHANNEL POWER MOSFET Order code STL45P3LLH6 VDS -30 V RDS(on) max 13 mΩ ID -45 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power