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STMicroelectronics THB DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
THBT200S

STMicroelectronics
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
DUAL BIDIRECTIONALCROWBARPROTECTION. PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has been
Datasheet
2
THBT15011DRL

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
3
THBT27011D

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
4
THBT7011DRL

STMicroelectronics
DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. BREAKDOWN VOLTAGE: 70V Min. LOW DYNAMIC BREAKOVER VOLTAGE. SO-8 DESCRIPTION Dedicated to telecommunication equipment protection,this
Datasheet
5
THBT15011D

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
6
THBT16011D

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
7
THBT200

STMicroelectronics
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
DUAL BIDIRECTIONALCROWBARPROTECTION. PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has been
Datasheet
8
THBT20011D

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
9
THBT200S1

STMicroelectronics
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
DUAL BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : - IPP = 35 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has bee
Datasheet
10
THBT7011D

STMicroelectronics
DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. BREAKDOWN VOLTAGE: 70V Min. LOW DYNAMIC BREAKOVER VOLTAGE. SO-8 DESCRIPTION Dedicated to telecommunication equipment protection,this
Datasheet
11
THBTXXX11D

STMicroelectronics
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedica
Datasheet
12
SMTHBT200

STMicroelectronics
TRISILTM FOR LINE CARD PROTECTION
BIDIRECTIONAL CROWBAR PROTECTION REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 µs) HOLDING CURRENT: IH = 150 mA BREAKDOWN VOLTAGE : 200V min BREAKOVER VOLTAGE : 265V max SMC DESCRIPTION This protection device has been especially designed to p
Datasheet
13
AS21P2THB

STMicroelectronics
Low voltage high bandwidth dual single-pole double-throw analog switch
te
 Ultra low power dissipation: ole
  – ICC = 1 A (max.) at TA = 85 °C s
 Low “ON” resistance: b
  – RON = 4.8  (TA = 25 °C) at VCC = 4.3 V - O
  – RON = 5.9  (TA = 25 °C) at VCC = 3.0 V )
 Wide operating voltage range: t(s
  – VCC (opr.) = 1.65 V to
Datasheet



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