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STMicroelectronics |
STW7NA90 nd Voltage (DC) Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area October 1998 Va l u e ST W7NA90 STH7NA90F I 900 900 ± 30 7 4.7 43 30 30 190 70 1.52 0.56 − −− −− − 4000 -65 to 1 |
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STMicroelectronics |
STW12NK90Z Type STW12NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.88Ω ID 11A pW 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH |
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STMicroelectronics |
STW20NC50 in Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 18.4 11.6 73.6 220 1.75 2 –65 to 15 |
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STMicroelectronics |
STW9NK90Z Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z ■ ■ ■ VDSS 900V 900V 900V 900V RDS(on) <1.3Ω <1.3Ω <1.3Ω <1.3Ω ID 8A 8A 8A 8A Pw 160 W 3 3 1 2 160 W 160 W 160 W TO-220 1 D²PAK Extremely high dv/dt capability 100% avalanche tested 1 3 2 Gate ch |
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STMicroelectronics |
STW20NB50 due to the temperature rise at the high output can also be reduced. This stereo audio power IC, designed for car audio use, has two built−in channels to reduce the characteristic difference between L and R channels. It also contains various kind of p |
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STMicroelectronics |
STW14NC50 rent (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 14 8.7 56 190 1.5 3.5 –65 to 150 150 (1)I |
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STMicroelectronics |
N-channel MOSFET Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V <0.054 Ω 54 A t(s) ■ 100% avalanche tested c ■ Low input capacitance and gate charge du ■ Low gate input resistance ProApplication te ■ Switching applications soleDescription ObThis series of device |
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STMicroelectronics |
STW5NA90 |
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STMicroelectronics |
STW7NA80 Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe o |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) (@Tjmax) max ID PW STP12NK60Z STF12NK60Z STW12NK60Z 650 V 650 V 650 V <0.640 Ω 10 A 150 W <0.640 Ω 10 A 35 W <0.640 Ω 10 A 150 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low |
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STMicroelectronics |
103 dB SNR audio DAC ■ DAC www.DataSheet4U.com – 24-bit audio DAC – 103 dB dynamic range – Asynchronous DAC path with 8 to 48kHz sampling rate Supply – Direct connection to the battery thanks to integrated power management Inputs – I2S digital input Analog output driver |
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STMicroelectronics |
STW12NA60 Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 1 |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
STW45NM50 TYPE STW45NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 45 A VDSS (@Tjmax) 550V s s TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCE |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c ■ Worldwide best RDS(on) * area amongst the usilicon based devices rod ■ Higher VDSS rating P ■ High dv/dt capability te ■ Excellent switching performance le ■ |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STW9NA60 Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area October 1998 Va l u e ST W9NA60 STH9NA60F I 600 600 ± 30 6.4 9.5 46 38 38 70 160 0.56 1.28 4000 -65 to 150 150 Un it V V V A |
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STMicroelectronics |
STW9NB80 ot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at |
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STMicroelectronics |
STW13009 ■ ■ ■ ■ Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Application ■ Switch mode power supplies TO-247 Description The device is manufactured using high vo |
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STMicroelectronics |
STW9NB90 ID IDM ( •) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating |
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Desde 2024. D4U Semiconductor.
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