STMicroelectronics STN Hoja de datos

No.	parte #	Fabricante	Descripción
1	STN9360	STMicroelectronics	High voltage fast-switching PNP power transistor ■ ■ High voltage capability Applications ■ ■ Lighting Switch mode power supply Description This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switc
2	STN1NK80Z	STMicroelectronics	N-channel Power MOSFET Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 16 Ω ID 250 mA Applications • Switching applications Description These high-voltage
3	STNRG011	STMicroelectronics	PFC and time-shift LLC resonant controller • Digital combo multi-mode PFC + time-shift LLC resonant half-bridge controller • Onboard 800 V startup circuit, line sense and X-cap discharge compliant with IEC 62368-1, for reduced standby power • Enhanced fixed on time multi-mode TM PFC controlle
4	STN3NF06	STMicroelectronics	N-CHANNEL MOSFET Type STN3NF06 VDSS (@Tjmax) 60V RDS(on) <0.1Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ID 4A Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™"
5	STN3NE06L	STMicroelectronics	N-CHANNEL MOSFET Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s D
6	STNRG011A	STMicroelectronics	PFC and time-shift LLC resonant controller Product status link STNRG011A Product summary Order code STNRG011A STNRG011ATR Package SO20 Packing Tube Tape & Reel • Digital combo multi-mode PFC + time-shift LLC resonant half-bridge controller • Onboard 800 V startup circuit, line sense
7	STNRG388A	STMicroelectronics	Digital controller  Up to 6 programmable PWM generators (SMED - “State Machine Event Driven”) – 10 ns event detection and reaction – Max.1.3 ns PWM resolution – Single, coupled and two coupled operational modes – Up to 3 internal/external events per SMED  4 analog co
8	STN3PF06	STMicroelectronics	P-Channel MOSFET Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Application ■ Switching applications Description This Power MOSFET is the latest development of
9	STN1NK60Z	STMicroelectronics	N-CHANNEL MOSFET 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W • 100% avalanche tested • Extremely high dv/dt capability •
10	2STN1550	STMicroelectronics	Low voltage fast-switching NPN power bipolar transistors ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting devices in medium power SOT-89 and SOT-223 packages In compliance with the 2002/93/EC European Directive 2 2 3 ■ 1 SOT-8
11	STN9260	STMicroelectronics	PNP power transistor ■ High voltage capability ■ Fast switching speed Applications ■ Lighting ■ Switch mode power supply Description This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology
12	N1HNK60	STMicroelectronics	STN1HNK60 TYPE VDSS RDS(on) ID Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 600 V 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W ■ TYPICAL RDS(on) = 8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILIT
13	STN878	STMicroelectronics	NPN transistor ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE >100 ■ 5 A continuous collector current t(s)Applications uc ■ Power management in portable equipment rod ■ Voltage regulation in bias supply circuits P ■ Switching regulator in
14	2STN2340	STMicroelectronics	Low voltage fast-switching PNP power transistors ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC converter Description The devices are PNP transistors manufactured
15	STNRGPF02	STMicroelectronics	2-channel interleaved PFC driver • Embedded digital inrush current limiter function • Interleaved PFC digital controller • Two interleaved channels PFC • Continuous conduction mode • Fixed frequency operation • Average current mode control • Mixed signal architecture • Soft start-up
16	STN6N60M2	STMicroelectronics	N-Channel MOSFET Order code VDS STN6N60M2 600 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications • Switching applications G(1) Description T
17	STN3NE06	STMicroelectronics	N-CHANNEL MOSFET Size™ ” stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s D
18	STN3NF06L	STMicroelectronics	N-CHANNEL MOSFET Order code STN3NF06L VDS 60 V RDS(on) max. 0.1 Ω ID 4A  Exceptional dv/dt capability  100% avalanche tested  Low threshold drive Applications  Switching applications Description This Power MOSFET series realized with STMicroelectronics unique
19	STN1NF10	STMicroelectronics	N-CHANNEL MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC
20	STN1NF20	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STN1NF20 VDSS 200 V RDS(on) max < 1.5 Ω ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability ID 1A Applications ■ Switching applications Description This Power MOSFET has been developed using STMicroelectronics’