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STMicroelectronics |
STD65NF06 Type STD65NF06 STP65NF06 ■ ■ VDSS 60V 60V RDS(on) <14mΩ <14mΩ ID 60A 60A 3 1 1 2 3 Standard level gate drive 100% avalanche tested DPAK TO-220 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature |
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STMicroelectronics |
STD9NM60N Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
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STMicroelectronics |
STD85N3LH5 www.DataSheet4U.com Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS 30 V 30 V 30 V RDS(on) max < 0.005 Ω < 0.0054 Ω < 0.0054 Ω ID 80 A 80 A 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low |
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STMicroelectronics |
STD3NB50 tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissip |
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STMicroelectronics |
N-CHANNEL MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATI |
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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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STMicroelectronics |
N-CHANNEL MOSFET Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is |
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STMicroelectronics |
P-CHANNEL MOSFET Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4Ω 2.8 A 70 W ■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability Applications ■ Switching applications |
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STMicroelectronics |
Adaptive 3.4 Gbps 3:1 TMDS/HDMI signal equalizer ■ Digital video signal equalizer with 3:1 HDMI switch ■ Compatible with the high-definition multimedia interface (HDMI) v1.3 digital interface ■ 340 MHz maximum clock speed operation supports all video formats with deep color at maximum refresh rates |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS@ TJmax STD5N60M2 STP5N60M2 650 V STU5N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.4 Ω ID 3.5 A Applications • Switching applications |
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STMicroelectronics |
N-channel Power MOSFET Order code STD6N90K5 VDS 900 V RDS(on) max. 1.10 Ω ID 6A Figure 1: Internal schematic diagram Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applicatio |
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STMicroelectronics |
N-channel MOSFET Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Descrip |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. ID STD8N60DM2 600 V 600 mΩ 8A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected PTOT 85 W |
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STMicroelectronics |
STD36NH02L Type STD36NH02L VDSS 24V RDS(on) <0.0145Ω ID 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced Description This series of products utilizes the |
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STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 10 2 15 -65 to 150 150 Unit V V V A A |
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STMicroelectronics |
Single-Chip Worldwide iDTV Processor ics and On-Screen Display ■ Auxiliary Video/Graphics Sub-System for Monitor output ■ Exhaustive set of peripherals for DTV Chassis Control ■ DDR333 Unified Memory Interface (LMI) ■ Programmable External Memory Interface (EMI) ■ CRT and Flat Panel Dis |
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STMicroelectronics |
3:1 TMDS / HDMI signal equalizer ■ Compatible with www.DataSheet4U.com ■ Conforms to the ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HDMI v1.3 digital interface TMDS voltage standard on input and output channels 340 MHz maximum clock speed operation enabling up to 3.4 Gbps data rate per channel Int |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 |
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STMicroelectronics |
STD90N02L Type STD90N02L STD90N02L-1 ■ ■ ■ ■ ■ VDSS 25V 25V RDS(on) Max <0.006Ω <0.006Ω ID 60A 60A 3 1 3 2 1 RDS(ON) * Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device In compliance with the 2002/95/ec europe |
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STMicroelectronics |
Power MOSFET Order code STD18NF03L VDS 30 V RDS(on) max. < 50 mΩ ID 17 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This Power |
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Desde 2024. D4U Semiconductor.
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