STMicroelectronics P20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STP20N65M5	STMicroelectronics	N-channel Power MOSFET Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Appli
2	VNP20N07FI	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
3	P20NE	STMicroelectronics	STP20NE Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H
4	STP20N95K5	STMicroelectronics	N-channel Power MOSFET Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Z
5	STP200N3LL	STMicroelectronics	N-CHANNEL POWER MOSFET Order code VDS STP200N3LL 30 V RDS(on) max. 2.4 mΩ ID 120 A PTOT 176.5 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N
6	CLP200M	STMicroelectronics	OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE DUAL BIDIRECTIONAL PROTECTION DEVICE. HIGH PEAK PULSE CURRENT : Ipp = 100A (10/1000 µs SURGE) MAX. VOLTAGE AT SWITCHING-ON : 290V MIN. CURRENT AT SWITCHING-OFF : 150mA FAILURE STATUS OUTPUT PIN BENEFITS Both primary and secondary protection levels in
7	BYW51FP200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio
8	VNP20N07	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
9	TLP200G-1	STMicroelectronics	TRIPOLAR OVERVOLTAGE PROTECTION TRIPOLAR CROWBAR PROTECTION TIP TAB GND RING VOLTAGE RANGE SELECTED TELECOM APPLICATIONS REPETITIVE PEAK PULSE CURRENT : IPP = 100 A (10 / 1000 µs) HOLDING CURRENT : IH = 150 mA LOW CAPACITANCE : C = 110 pF typ. FOR D2PAK TLPxxG LOW LEAKAGE CU
10	TLP200M	STMicroelectronics	TRIPOLAR OVERVOLTAGE PROTECTION TRIPOLAR CROWBAR PROTECTION TIP TAB GND RING VOLTAGE RANGE SELECTED TELECOM APPLICATIONS REPETITIVE PEAK PULSE CURRENT : IPP = 100 A (10 / 1000 µs) HOLDING CURRENT : IH = 150 mA LOW CAPACITANCE : C = 110 pF typ. FOR D2PAK TLPxxG LOW LEAKAGE CU
11	STP20NF20	STMicroelectronics	N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D
12	25P20VP	STMicroelectronics	Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interfac
13	20NF20	STMicroelectronics	STP20NF20 Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D
14	STGP20NC60V	STMicroelectronics	very fast IGBT ■ ■ ■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot
15	LNBP20	STMicroelectronics	LNBP supply and control voltage regulator summary ■ Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz ■ Fast oscillator start-up facilitates DiSEqCTM encoding ■ Two supply inputs for lowest diss
16	BYW77P200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited fo
17	P200NF03	STMicroelectronics	N-channel MOSFET Type STP200NF03 STB200NF03 STB200NF03-1 VDSS 30V 30V 30V RDS(on) <0.0037Ω <0.0037Ω <0.0037Ω 1. Current Limited by Package ■ Standard threshold drive ■ 100% avalanche tested ID 120A(1) 120A(1) 120A(1) Description This Power MOSFET is the latest
18	SGSP201	STMicroelectronics	N-Channel MOSFET Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 5 100 100 ±20 2.0 1.2 6 6 18 0.144 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 SGSP201 THERMAL DA
19	P20NM60FD	STMicroelectronics	N-CHANNEL MOSFET Type STF20NM60D STP20NM60FD STW20NM60FD VDSS 600V 600V 600V RDS(on) <0.29Ω <0.29Ω <0.29Ω ID Pw 20A 192W 20A 45W 20A 214W ■ High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge ■ Low gate input res
20	TYP2012	STMicroelectronics	SCR FOR OVERVOLTAGE PROTECTION HIGH SURGE CURRENT CAPABILITY HIGH dI/dt RATING HIGH STABILITY AND RELIABILITY DESCRIPTION The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protect