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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR ol I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR CTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -200 V I C = -100 µ A -300 Min. Typ. Max. -100 Unit nA V V ( |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min. Typ. Max. 50 50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)C |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 Applications Video amplifier circuits (rgb cathode current control) Telephone wireline interface (hook switches, di |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE 0.1 20 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 1V f = 1MHz Min. Typ. 2 Max. Unit pF * Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed: 1A 1/4 TMMBAT 41 Figure 1. Forward current versus forward voltage |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES 00°C Test Conditions IR = 100µA IF = 200mA IF = 10mA IF = 50mA IF = 2mA IF = 15mA VR = 25V BAT 43 0.26 All Types BAT 42 Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C trr η Tj = 25°C VR = 1V Tj = 25°C IF |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES 00°C Test Conditions IR = 100µA IF = 200mA IF = 10mA IF = 50mA IF = 2mA IF = 15mA VR = 25V BAT 43 0.26 All Types BAT 42 Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C trr η Tj = 25°C VR = 1V Tj = 25°C IF |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE 10mA IF = 250mA VR = 1.5V Min. 100 0.25 0.45 1 0.5 5 0.8 7.5 2 15 5 20 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0V VR = 1V f = 1MHz Min. Typ. 10 6 Max. Uni |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES °C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 40V VR = 20V VR = 10V TMMBAT48 VR = 20V VR = 10V TMMBAT47 |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES °C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 40V VR = 20V VR = 10V TMMBAT48 VR = 20V VR = 10V TMMBAT47 |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Condition |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR TERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Test Conditions V CE = -30 V V CE = -30 V V CB = -5 |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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STMicroelectronics |
MOS PROGRAMMBLE TIMER |
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Desde 2024. D4U Semiconductor.
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