| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
Complementary power Darlington transistor ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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STMicroelectronics |
Low voltage NPN power transistor ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C Application ■ General purpose linear and switching equipment Description The device is manufactured |
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STMicroelectronics |
Complementary power Darlington transistor ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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STMicroelectronics |
Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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STMicroelectronics |
Automotive-grade low voltage PNP power transistor • AEC-Q101 qualified • Surface-mounting TO-252 power package in tape and reel • Complementary to the NPN type MJD31CT4-A Application • General purpose linear and switching equipment Description The device is manufactured in planar technology with a “ |
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STMicroelectronics |
Low voltage PNP power transistor • Surface-mounting TO-252 power package in tape and reel • Complementary to the NPN type MJD31CT4 Application • General purpose linear and switching equipment Description The device is manufactured in planar technology with a “base island” layout. Th |
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STMicroelectronics |
NPN power transistor • Surface-mounting DPAK (TO-252) power package in tape and reel • Electrically similar to TIP47 Application • Switch mode power supplies • Audio amplifiers • General purpose switching and amplifier Description The device is manufactured using medium |
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STMicroelectronics |
Low voltage complementary power transistors TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxia |
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STMicroelectronics |
Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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STMicroelectronics |
Low voltage NPN power transistor • Surface-mounting DPAK (TO-252) power package in tape and reel • Electrically similar to MJE3055T Application • General purpose switching and amplifier Description The device is manufactured in planar technology with “base island” layout. The result |
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STMicroelectronics |
Low voltage complementary power transistors TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxia |
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Desde 2024. D4U Semiconductor.
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