| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
2 Mb FLASH MEMORY |
|
|
|
|
STMicroelectronics |
1 Mbit Flash Memory PP VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Supply Voltage Ground E G VSS AI00627B August 1998 1/20 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr M28F102 Figure 2A. L |
|
|
|
|
STMicroelectronics |
64 Kbit (8K x 8) Parallel EEPROM |
|
|
|
|
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
|
|
|
|
STMicroelectronics |
16 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
|
|
|
|
STMicroelectronics |
64 Kbit (8Kb x8) Parallel EEPROM |
|
|
|
|
STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
|
|
|
|
STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
|
|
|
|
STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
|
|
|
|
STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
|
|
|
|
STMicroelectronics |
M28C16B Data Input / Output Write Enable Chip Enable Output Enable Ready/Busy (M28C17B only) Supply Voltage Ground W E G M28C16B M28C17B RB (M28C17B only) VSS AI02816 February 1999 This is preliminary information on a new product now in development or u |
|
|
|
|
STMicroelectronics |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME: – 10µs typical – Double Word Programming O |
|
|
|
|
STMicroelectronics |
16K (2K x 8) PARALLEL EEPROM |
|
|
|
|
STMicroelectronics |
1 Mb FLASH MEMORY |
|
|
|
|
STMicroelectronics |
256 Kbit Flash Memory |
|
|
|
|
STMicroelectronics |
64 Kbit (8Kb x8) Parallel EEPROM |
|
|
|
|
STMicroelectronics |
16 Kbit (2K x 8) Parallel EEPROM |
|
|
|
|
STMicroelectronics |
16 Kbit (2K x 8) Parallel EEPROM |
|
|
|
|
STMicroelectronics |
16 Kbit (2K x 8) Parallel EEPROM than the M28C16, in addition to the Ready/Busy pin. VCC 11 A0-A10 8 DQ0-DQ7 Signal Names A0 - A10 Addres |
|
|
|
|
STMicroelectronics |
16 Kbit (2K x 8) Parallel EEPROM |
|
Desde 2024. D4U Semiconductor.
|