STMicroelectronics M27 Hoja de datos

No.	parte #	Fabricante	Descripción
1	27C322	STMicroelectronics	M27C322 a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e
2	M27C160	STMicroelectronics	16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most
3	M27V101	STMicroelectronics	1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e
4	M27C322	STMicroelectronics	32 Mbit 2Mb x16 UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e
5	M27256	STMicroelectronics	NMOS 256K 32K x 8 UV EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. VPP A12 A7 A6
6	M27C512	STMicroelectronics	512 Kbit 64Kb x8 UV EPROM and OTP EPROM ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consumption: – Active current 30 mA – Standby current 100 µA ■ Programming voltage: 12.75 V ± 0.25 V ■ Programming time around 6 s. ■ Electronic Signature – Manufactu
7	M27V400	STMicroelectronics	4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM a 2-line control function which accommodates the use of multiple memory connection. The two-line control function allows: a. the lowest possible memory power dissipation b. complete assurance that output bus contention will not occur. For the most e
8	M27C1001	STMicroelectronics	1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM ■ 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consumption: t(s) – Active Current: 30 mA at 5 MHz – Standby Current: 100 µA uc ■ Programming Voltage: 12.75V ± 0.25V d ■ Programming Time: 100 µs/word ro ■ Electronic Signatu
9	M27C400	STMicroelectronics	4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM a 2-line control function which accommodates the use of multiple memory connection. The two-line control function allows: a. the lowest possible memory power dissipation b. complete assurance that output bus contention will not occur. For the most e
10	M27V160	STMicroelectronics	16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most
11	M27V801	STMicroelectronics	8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most
12	M27C256B	STMicroelectronics	256 Kbit (32Kb x 8) UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: ● the lowest possible memory power dissipation, ● complete assurance that output bus contention will not occur. For the most eff
13	M27C4001	STMicroelectronics	4 Mbit (512Kb x 8) UV EPROM and OTP EPROM summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 35ns ■ Low power consumption: t(s) – Active Current 30mA at 5MHz – Standby Current 100µA uc ■ Programming voltage: 12.75V ± 0.25V d ■ Programming time: 100µs/Word ro ■ Electronic signa
14	M27C405	STMicroelectronics	4 Mbit 512Kb x 8 OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most
15	M27C516	STMicroelectronics	512 Kbit 32Kb x16 OTP EPROM 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most ef
16	M27C800	STMicroelectronics	8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C800 is offered in PDIP42, PLCC44 and SO44 packages. Figure 1. Logic Diagram
17	M27V201	STMicroelectronics	2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation b. complete assurance that output bus contention will not occur. For the most ef
18	M27V322	STMicroelectronics	32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e
19	M27W032	STMicroelectronics	32 Mbit 2Mb x16 3V Supply FlexibleROM Memory SUMMARY s ONE TIME PROGRAMMABLE s Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program s ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to 3.6V PROGRAMMING TIME – 9µs per Word typical
20	M2716	STMicroelectronics	NMOS 16K 2K x 8 UV EPROM Data Outputs Chip Enable / Program Output Enable Program Supply Supply Voltage Ground VSS AI00784B July 1994 1/9 M2716 Table 2. Absolute Maximum Ratings Symbol TA TBIAS TSTG VCC VIO VPP PD Parameter Ambient Operating Temperature Temperature Unde