No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank packag |
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STMicroelectronics |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts |
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STMicroelectronics |
Very low drop voltage regulator Very low-dropout voltage (0.45 V) Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) Output current up to 500 mA Logic-controlled electronic shutdown Output voltages of 1.5; 1.8; 2.5; 3.3; 4.7; 5; 6; 8; 8.5; 9; 12 V Au |
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STMicroelectronics |
WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS igh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF347 LF247 LF147 Example : LF347IN Temperature Range 0 C, +70 C –40 C, +105 C -55 C, +125 C o o o |
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STMicroelectronics |
Wide bandwidth dual JFET operational amplifiers ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free ope |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STP190N55LF3 VDSS 55 V RDS(on) max ID PD < 3.7 mΩ 120 A 312 W ■ Logic level drive ■ 100% avalanche tested Application ■ Switching applications – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinem |
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STMicroelectronics |
Very low drop voltage regulator Very low-dropout voltage (0.45 V) Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) Output current up to 500 mA Logic-controlled electronic shutdown Output voltages of 1.5; 1.8; 2.5; 3.3; 4.7; 5; 6; 8; 8.5; 9; 12 V Au |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank packag |
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STMicroelectronics |
WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS igh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF347 LF247 LF147 Example : LF347IN Temperature Range 0 C, +70 C –40 C, +105 C -55 C, +125 C o o o |
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STMicroelectronics |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts |
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STMicroelectronics |
Very low drop voltage regulators ■ Very low dropout voltage (0.45V) ■ Very low quiescent current (TYP. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown ■ Output voltages of 1.5; 1.8; 2.5; 2.7; 3; 3.3; 3.5; 4; 5; 6; 8; 8.5; 9; |
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STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS |
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STMicroelectronics |
N-channel MOSFET Type VDSSS RDS(on) ID Pw STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W 1. Current limited by package ■ 100% avalanche tested ■ Logic level threshold Applications ■ Switching application – Automotive Description This STripFET™ II Power MOSFET technolo |
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STMicroelectronics |
Dual N-channel Power MOSFET Order code STL7DN6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A • Designed for automotive application and AEC-Q101 qualified • Logic level VGS(th) • 175 °C junction temperature • 100% avalanche rated • Wettable flank package Figure 1. Internal schema |
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STMicroelectronics |
N-channel Power MOSFET 1 2 3 4 PowerFLAT™5x6 Order code STL7N6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A • Designed for automotive applications and AEC-Q101 qualified • Logic level VGS(th) • 175 °C junction temperature • 100% avalanche rated • Wettable flank package Fi |
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STMicroelectronics |
Wide bandwidth single JFET operational amplifiers ■ Internally adjustable input offset voltage ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Intern |
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STMicroelectronics |
N-channel Power MOSFET Order code STL8N10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated Wettable flank package Applications Switching applications Description This de |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code STL8DN10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A Designed for automotive applications and AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated Wettable flank package Applications |
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STMicroelectronics |
N-channel Power MOSFET Type STD95N4LF3 VDSS 40 V RDS(on) max ID < 6.0 mΩ 80 A(1) PD 110 W 1. Value limited by wire bonding ■ 100% avalanche tested ■ Logic level drive Applications ■ Switching application – Automotive Description This device is an N-channel enhanc |
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