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STMicroelectronics LF3 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
LF356

STMicroelectronics
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS
low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts
Datasheet
2
8DN6LF3

STMicroelectronics
Automotive-grade dual N-channel Power MOSFET
Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5
• AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C maximum junction temperature
• 100% avalanche rated
• Wettable flank packag
Datasheet
3
LF355

STMicroelectronics
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS
low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts
Datasheet
4
LF33AB

STMicroelectronics
Very low drop voltage regulator

 Very low-dropout voltage (0.45 V)
 Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode)
 Output current up to 500 mA
 Logic-controlled electronic shutdown
 Output voltages of 1.5; 1.8; 2.5; 3.3; 4.7; 5; 6; 8; 8.5; 9; 12 V
 Au
Datasheet
5
LF347

STMicroelectronics
WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS
igh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF347 LF247 LF147 Example : LF347IN Temperature Range 0 C, +70 C
  –40 C, +105 C -55 C, +125 C o o o
Datasheet
6
LF353

STMicroelectronics
Wide bandwidth dual JFET operational amplifiers

■ Low power consumption
■ Wide common-mode (up to VCC+) and differential voltage range
■ Low input bias and offset current
■ Output short-circuit protection
■ High input impedance JFET input stage
■ Internal frequency compensation
■ Latch up free ope
Datasheet
7
STP190N55LF3

STMicroelectronics
N-CHANNEL POWER MOSFET
Type STP190N55LF3 VDSS 55 V RDS(on) max ID PD < 3.7 mΩ 120 A 312 W
■ Logic level drive
■ 100% avalanche tested Application
■ Switching applications
  – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinem
Datasheet
8
LF33C

STMicroelectronics
Very low drop voltage regulator

 Very low-dropout voltage (0.45 V)
 Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode)
 Output current up to 500 mA
 Logic-controlled electronic shutdown
 Output voltages of 1.5; 1.8; 2.5; 3.3; 4.7; 5; 6; 8; 8.5; 9; 12 V
 Au
Datasheet
9
STL8DN6LF3

STMicroelectronics
Automotive-grade dual N-channel Power MOSFET
Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5
• AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C maximum junction temperature
• 100% avalanche rated
• Wettable flank packag
Datasheet
10
LF347IN

STMicroelectronics
WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS
igh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF347 LF247 LF147 Example : LF347IN Temperature Range 0 C, +70 C
  –40 C, +105 C -55 C, +125 C o o o
Datasheet
11
LF357

STMicroelectronics
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS
low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts
Datasheet
12
LF30C

STMicroelectronics
Very low drop voltage regulators

■ Very low dropout voltage (0.45V)
■ Very low quiescent current (TYP. 50 µA in OFF mode, 500 µA in ON mode)
■ Output current up to 500 mA
■ Logic-controlled electronic shutdown
■ Output voltages of 1.5; 1.8; 2.5; 2.7; 3; 3.3; 3.5; 4; 5; 6; 8; 8.5; 9;
Datasheet
13
LF35C

STMicroelectronics
VERY LOW DROP VOLTAGE REGULATORS
Datasheet
14
100N3LF3

STMicroelectronics
N-channel MOSFET
Type VDSSS RDS(on) ID Pw STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W 1. Current limited by package
■ 100% avalanche tested
■ Logic level threshold Applications
■ Switching application
  – Automotive Description This STripFET™ II Power MOSFET technolo
Datasheet
15
STL7DN6LF3

STMicroelectronics
Dual N-channel Power MOSFET
Order code STL7DN6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A
• Designed for automotive application and AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C junction temperature
• 100% avalanche rated
• Wettable flank package Figure 1. Internal schema
Datasheet
16
STL7N6LF3

STMicroelectronics
N-channel Power MOSFET
1 2 3 4 PowerFLAT™5x6 Order code STL7N6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A
• Designed for automotive applications and AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C junction temperature
• 100% avalanche rated
• Wettable flank package Fi
Datasheet
17
LF351

STMicroelectronics
Wide bandwidth single JFET operational amplifiers

■ Internally adjustable input offset voltage
■ Low power consumption
■ Wide common-mode (up to VCC+) and differential voltage range
■ Low input bias and offset current
■ Output short-circuit protection
■ High input impedance JFET input stage
■ Intern
Datasheet
18
8N10LF3

STMicroelectronics
N-channel Power MOSFET
Order code STL8N10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A
 AEC-Q101 qualified
 Logic level VGS(th)
 175 °C maximum junction temperature
 100% avalanche rated
 Wettable flank package Applications
 Switching applications Description This de
Datasheet
19
8DN10LF3

STMicroelectronics
Automotive-grade dual N-channel Power MOSFET
Order code STL8DN10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A
 Designed for automotive applications and AEC-Q101 qualified
 Logic level VGS(th)
 175 °C maximum junction temperature
 100% avalanche rated
 Wettable flank package Applications
Datasheet
20
95N4LF3

STMicroelectronics
N-channel Power MOSFET
Type STD95N4LF3 VDSS 40 V RDS(on) max ID < 6.0 mΩ 80 A(1) PD 110 W 1. Value limited by wire bonding
■ 100% avalanche tested
■ Logic level drive Applications
■ Switching application
  – Automotive Description This device is an N-channel enhanc
Datasheet



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