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STMicroelectronics |
STH8N80FI |
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STMicroelectronics |
6A N-channel Power MOSFET VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC • Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environ |
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Desde 2024. D4U Semiconductor.
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