STMicroelectronics GF7 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GF7NB60SL	STMicroelectronics	IGBT TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGF7NB60SL 600 V < 1.6 V 7A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE s HIGH CURRENT CAPABILITY DESCRIPTION Using the latest high voltage tech
2	GF7NC60HD	STMicroelectronics	N-channel IGBT ■ Low on-voltage drop (VCE(sat)) ■ Off losses include tail current ■ Losses include diode recovery energy ■ High frequency operation up to 70 kHz ■ Very soft ultra fast recovery anti parallel diode Applications ■ High frequency inverters ■ SMPS and P
3	STGF7NC60HD	STMicroelectronics	N-channel IGBT ■ Low on-voltage drop (VCE(sat)) ■ Off losses include tail current ■ Losses include diode recovery energy ■ High frequency operation up to 70 kHz ■ Very soft ultra fast recovery anti parallel diode Applications ■ High frequency inverters ■ SMPS and P