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STMicroelectronics |
STD90N02L Type STD90N02L STD90N02L-1 ■ ■ ■ ■ ■ VDSS 25V 25V RDS(on) Max <0.006Ω <0.006Ω ID 60A 60A 3 1 3 2 1 RDS(ON) * Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device In compliance with the 2002/95/ec europe |
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STMicroelectronics |
VARICAP AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to cont |
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STMicroelectronics |
Double channel high-side driver Max. transient supply voltage Operating voltage range Typ. on-state resistance (per channel) Current limitation (typ.) Standby current (max.) VCC VCC RON ILIMH ISTBY 36 V 4 to 28 V 25 mΩ 35 A 0.5 µA PowerSSO-16 Product status link VND9025AJ Prod |
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STMicroelectronics |
N-channel Power MOSFET Type STD90N4F3 STI90N4F3 STP90N4F3 STU90N4F3 ■ ■ VDSS 40 V 40 V 40 V 40 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 80 A 80 A 80 A 80 A Pw 1 3 3 2 1 110 W 110 W 110 W 110 W DPAK IPAK Standard threshold drive 100% avalanche tested 1 |
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STMicroelectronics |
N-Channel Power MOSFET Type STD90N03L STD90N03L-1 VDSS 30V 30V RDS(on) 0.0057Ω 0.0057Ω 1. Pulse width limited by safe operating area ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device ID 80A (1) 80A (1) Des |
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STMicroelectronics |
Double channel high-side driver Max transient supply voltage Operating voltage range Typ. on-state resistance (per Ch) Current limitation (typ) Standby current (max) VCC VCC RON ILIMH ISTBY 36 V 4 to 28 V 12 mΩ 63 A 0.5 µA PowerSSO-16 Product status link VND9012AJ Product summ |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = |
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STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor |
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STMicroelectronics |
High voltage NPN Darlington transistor • High voltage special Darlington structure • Very rugged Bipolar technology • High DC current gain Application • High ruggedness electronic ignition for small engines Description The device is a high voltage NPN transistor in monolithic special Darl |
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STMicroelectronics |
Double channel high-side driver Max. transient supply voltage Operating voltage range Typ. on-state resistance (per channel) Current limitation (typ.) Standby current (max.) VCC VCC RON ILIMH ISTBY 36 V 4 to 28 V 9.4 mΩ 67 A 0.5 µA PowerSSO-16 Product status link VND9008AJ Pro |
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STMicroelectronics |
Double channel high-side driver Max. transient supply voltage Operating voltage range Typ. on-state resistance (per channel) Current limitation (typ.) Standby current (max.) VCC VCC RON ILIMH ISTBY 36 V 4 to 28 V 16 mΩ 50.6 A 0.5 µA PowerSSO-16 Product status link VND9016AJ Pr |
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STMicroelectronics |
N-Channel Power MOSFET Type STD90N03L STD90N03L-1 VDSS 30V 30V RDS(on) 0.0057Ω 0.0057Ω 1. Pulse width limited by safe operating area ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device ID 80A (1) 80A (1) Des |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) ID STD90NH02L-1 )STD90NH02L 24V 24V <0.006Ω <0.006Ω t(s1. Value limited by wire bonding uc ■ RDS(ON) * Qg industry’s benchmark d ■ Conduction losses reduced Pro t(s) ■ Switching losses reduced te c ■ Low threshold device 60A(1 |
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Desde 2024. D4U Semiconductor.
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