STMicroelectronics D45 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D45H8	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
2	D45H11	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
3	STD45N10F7	STMicroelectronics	N-CHANNEL POWER MOSFET Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7t
4	D45H5	STMicroelectronics	PNP SILICON POWER TRANSISTORS ce Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CEO V EB = -5V I
5	D45H11FP	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are man
6	STD45P4LLF6AG	STMicroelectronics	P-channel Power MOSFET Order code STD45P4LLF6AG VDS -40 V RDS(on) max. 15 mΩ ID -50 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Sw
7	STD45NF03L	STMicroelectronics	N-CHANNEL POWER MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H
8	STD45NF75	STMicroelectronics	N-CHANNEL POWER MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HI
9	MJD45H11T4	STMicroelectronics	Low voltage complementary power transistors TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxia