STMicroelectronics D44 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D44H11	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
2	BD442	STMicroelectronics	PNP power transistor ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low
3	D44H8	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
4	BD440	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter
5	BD441	STMicroelectronics	NPN power transistor ■ NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low s
6	D44H11FP	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are man
7	STD44N4LF6	STMicroelectronics	N-channel Power MOSFET Order code STD44N4LF6 VDSS 40 V RDS(on) max 12.5 mΩ ID 44 A ■ 100% avalanche tested ■ Logic level drive Applications ■ Switching applications ■ Automotive Description This device is an N-channel Power MOSFET developed using the 6th generation
8	MJD44H11T4	STMicroelectronics	Low voltage complementary power transistors TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxia