STMicroelectronics D10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D1047	STMicroelectronics	NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The
2	2SD1047	STMicroelectronics	NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The
3	VND10B	STMicroelectronics	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Type VDSS RDS(on) In(1) VCC VND10B 40 V 0.1 Ω 3.4 A 26 V )Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of
4	D10PF06	STMicroelectronics	P-Channel Power MOSFET Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MO
5	D10	STMicroelectronics	Memory Micromodules mounted on Super 35 mm metallized epoxy tape, and are delivered on reels. These contain all of the chips from a number of wafers, including those chips that were found to be non-functioning during testing. Traceability is ensured by a label fixed on
6	HVLED101	STMicroelectronics	Advanced high power factor flyback controller Product status link HVLED101 Product summary Order code Package Packaging HVLED101 Tube SOP14 HVLED101TR Tape and reel • Quasi-Resonant (QR) topology • Primary side regulation of output voltage • Direct optocoupler connection for secondary s
7	STCD1020	STMicroelectronics	Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low
8	STD100N03L	STMicroelectronics	N-CHANNEL MOSFET Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is
9	STCD1030	STMicroelectronics	Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low
10	GD10NC60HD	STMicroelectronics	very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■
11	GD10NC60S	STMicroelectronics	fast IGBT ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB ■ Low on-voltage drop (VCE(sat)) t(s)Application uc ■ Motor drive rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an exce
12	VND10BSP	STMicroelectronics	ISO HIGH SIDE SMART POWER SOLID STATE RELAY allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperat
13	STGD10NC60KD	STMicroelectronics	600V short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re
14	STGD10NC60KDT4	STMicroelectronics	600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and
15	STD10NM65N	STMicroelectronics	N-Channel MOSFET Order code VDS @ Tjmax. RDS(on) max. ID STD10NM65N 710 V 0.48 Ω 9A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Po
16	STGD10NC60H	STMicroelectronics	N-channel IGBT Type STGD10NC60H ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Description Using the latest high voltage technology based on a patented str
17	STD100N03L-1	STMicroelectronics	N-CHANNEL MOSFET Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is
18	STD10N60M2	STMicroelectronics	N-CHANNEL POWER MOSFET Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Appl
19	STGD10NC60HD	STMicroelectronics	very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■
20	STD10NF30	STMicroelectronics	N-CHANNEL POWER MOSFET TAB 3 1 DPAK Order code STD10NF30 VDS 300 V RDS(on)max. 0.33 Ω ID 10 A • Designed for automotive applications and AEC-Q101 qualified • Gate charge minimized • Very low intrinsic capacitances Figure 1. Internal schematic diagram Applications •