STMicroelectronics BUX Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUX80	STMicroelectronics	HIGH VOLTAGE NPN SILICON POWER TRANSISTOR ction-case Max 1.1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 800 V V CE = 800 V V BE = 10 V
2	BUX10	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTOR
3	BUX48A	STMicroelectronics	High voltage fast-switching NPN power transistors ■ NPN transistors ■ High voltage capability ■ High current capability ) ■ Fast switching speed uct(sApplications rod ■ Switching mode power supplies ■ Flyback and forward single transistor low power Pconverters leteDescription bsoThe BUX48 and BUX48
4	BUX98C	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTOR O V EBO Parameter Value 1200 1200 700 7 30 60 80 8 30 250 -65 to 200 200 Unit V V V V A A A A A W o C o C September 2003 1/4 BUX98C THERMAL DATA R thj-case Thermal Resistance Junction-case o Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 2
5	BUX77HR	STMicroelectronics	Hi-Rel PNP bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific
6	BUX77ESY	STMicroelectronics	Hi-Rel PNP bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific
7	BUX87	STMicroelectronics	High voltage NPN power transistor ■ High voltage capability (450 V VCEO) ■ Minimum lot-to-lot spread for reliable operation ■ High DC current gain Applications ■ Flyback and forward single transistor low power converters Description The BUX87 is manufactured using high voltage multi-
8	BUX348	STMicroelectronics	FAST-SWITCHING POWER TRANSISTOR 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH 450 T c = 100 o C T c = 100 o C Min. Typ. Max. 0.4 2 0.4 2 2 Unit m
9	BUX41	STMicroelectronics	HIGH CURRENT NPN SILICON TRANSISTOR
10	BUX47	STMicroelectronics	HIGH VOLTAGE POWER SWITCH
11	BUX48	STMicroelectronics	High voltage fast-switching NPN power transistors ■ NPN transistors ■ High voltage capability ■ High current capability ) ■ Fast switching speed uct(sApplications rod ■ Switching mode power supplies ■ Flyback and forward single transistor low power Pconverters leteDescription bsoThe BUX48 and BUX48
12	BUX48C	STMicroelectronics	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1
13	BUX98	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTORS ion Temperature 850 850 400 7 30 60 80 8 30 250 -65 to 200 200 Value BUX98A 1000 1000 450 V V V V A A A A A W o o Unit C C 1/4 BUX98 / BUX98A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcas
14	BUX98A	STMicroelectronics	High power NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications ■ High frequency and efficency converters ■ Linear and switching industrial equipment Description The BUX98A is a multi-epitaxial mesa NPN transistor in TO-3 meta
15	BUXD87	STMicroelectronics	HIGH VOLTAGE NPN POWER TRANSISTOR lue 1000 450 5 0.5 1 0.3 0.6 20 -65 to 150 150 Unit V V V A A A A W o o C C April 1999 1/6 BUXD87 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHA
16	BUX78HR	STMicroelectronics	Hi-Rel PNP bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C TO-257 2 31 Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot s
17	BUX78ESY	STMicroelectronics	Hi-Rel PNP bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C TO-257 2 31 Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot s
18	BUX98AP	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTOR Unit V V V V A A A A W oC oC 1/4 BUX98AP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICER Collector Cut-off Cu