No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = |
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