STMicroelectronics BD4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD436	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
2	BD433	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
3	BD435	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
4	BD442	STMicroelectronics	PNP power transistor ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low
5	BD434	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
6	BD437	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
7	BD438	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS
8	BD439	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter
9	BD440	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter
10	BD441	STMicroelectronics	NPN power transistor ■ NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low s