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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES commended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25° C Tj = 25° C Test Conditions IR = 100µA BAR 42FILM BAR 43FILM All IR ** Tj = 25° C Tj = 100° C Pulse |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K N.C. A BAR46 A K1 K2 BAR46A DESCRIPTION High voltage Schottky rectifier suited for SLIC protection during the card insertion oper |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES commended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25° C Tj = 25° C Test Conditions IR = 100µA BAR 42FILM BAR 43FILM All IR ** Tj = 25° C Tj = 100° C Pulse |
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STMicroelectronics |
Small signal Schottky diode • Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount device July 2017 This is information on a product in full production. DocID3288 Rev 5 1/7 www.st.com Characteristics 1 Characteristics BAR4 |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES ne 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25°C Tj = 25°C Test Conditions IR = 100µA BAR 42 BAR 43 All IR ** Pulse test: Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES commended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25° C Tj = 25° C Test Conditions IR = 100µA BAR 42FILM BAR 43FILM All IR ** Tj = 25° C Tj = 100° C Pulse |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES ne 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25°C Tj = 25°C Test Conditions IR = 100µA BAR 42 BAR 43 All IR ** Pulse test: Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K N.C. A BAR46 A K1 K2 BAR46A DESCRIPTION High voltage Schottky rectifier suited for SLIC protection during the card insertion oper |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES R 18 / BAS70-04 06 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions VBR Tj = 25°C IR = 10µA VF * Tj = 25°C IF = 1mA IR ** Tj = 25°C VR = 50V Pulse test: * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2% DYNAMIC CHARACTERIS |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE 5 mA 50 mA - 65 to 200 °C - 65 to 200 230 °C Value 400 Unit °C/W Min. Typ. Max. Unit 70 V 0.41 V 1 0.2 µA DYNAMIC CHARACTERISTICS Symbol C τ Test Conditions Tamb = 25°CVR = 0Vf = 1MHz Tamb = 25°CIF = 5mA Krakauer Method Min. Typ. |
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STMicroelectronics |
Small signal Schottky diode • Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount device July 2017 This is information on a product in full production. DocID3288 Rev 5 1/7 www.st.com Characteristics 1 Characteristics BAR4 |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES commended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25° C Tj = 25° C Test Conditions IR = 100µA BAR 42FILM BAR 43FILM All IR ** Tj = 25° C Tj = 100° C Pulse |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES ne 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25°C Tj = 25°C Test Conditions IR = 100µA BAR 42 BAR 43 All IR ** Pulse test: Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES commended pad layout. August 2001- Ed: 2B 1/4 BAR42FILM BAR43/A/C/SFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25° C Tj = 25° C Test Conditions IR = 100µA BAR 42FILM BAR 43FILM All IR ** Tj = 25° C Tj = 100° C Pulse |
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STMicroelectronics |
64 Mbit (4Mb x 16)/ 104MHz Clock Rate 1.8V Supply - Bare Die Burst PSRAM summary ■ Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers User-selectable Operating Modes – Asynchronous Modes: Random Read, and Write, Page Read – Synchronous Modes: NOR-Flash, Full Synchronous (Burst R |
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STMicroelectronics |
64/44-pin 8-bit MCU ■ Memories – 32K to 60K dual voltage High Density Flash (HDFlash) or ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash devices – 1K to 2K RAM – HDFlash endurance: 100 cycles, data reten- tion: |
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STMicroelectronics |
8-bit MCU for automotive Memories ■ 32 to 60 Kbyte dual voltage High Density Flash (HDFlash) ROM with readout protection capability. In-application programming and in- )circuit programming for HDFlash devices t(s ■ 1 to 2 Kbyte RAM c ■ HDFlash endurance: 100 cycles, data re |
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STMicroelectronics |
8-bit MCU for automotive Memories ■ 32 to 60 Kbyte dual voltage High Density Flash (HDFlash) ROM with readout protection capability. In-application programming and in- )circuit programming for HDFlash devices t(s ■ 1 to 2 Kbyte RAM c ■ HDFlash endurance: 100 cycles, data re |
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STMicroelectronics |
absolute digital output barometer • Dual full-scale absolute pressure sensor in a water-resistant package – Mode 1: 260 ~ 1260 hPa – Mode 2: 260 ~ 4060 hPa • Embedded analog hub for processing analog input data • Embedded Qvar for detecting electric charge variation • Current c |
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STMicroelectronics |
absolute digital output barometer • Dual full-scale absolute pressure with water-resistant package – Mode 1: 260 ~ 1260 hPa – Mode 2: 260 ~ 4060 hPa • Current consumption down to 1.7 μA • Absolute pressure accuracy: 0.5 hPa • Low pressure sensor noise: 0.32 Pa • Embedded temperature |
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Desde 2024. D4U Semiconductor.
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