STMicroelectronics 95N Hoja de datos

No.	parte #	Fabricante	Descripción
1	95N4F3	STMicroelectronics	N-channel Power MOSFET Order codes STB95N4F3 STD95N4F3 STP95N4F3 VDSS 40 V RDS(on) max. < 5.8 m Ω < 6.2 mΩ ID 80 A Pw 110 W ■ Standard threshold drive ■ 100% avalanche tested Applications ■ Switching applications – Automotive Description These devices are N-channel
2	STP95N2LH5	STMicroelectronics	N-channel Power MOSFET Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
3	STD95N2LH5	STMicroelectronics	N-channel Power MOSFET Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
4	STU95N2LH5	STMicroelectronics	N-channel Power MOSFET Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
5	95N4LF3	STMicroelectronics	N-channel Power MOSFET Type STD95N4LF3 VDSS 40 V RDS(on) max ID < 6.0 mΩ 80 A(1) PD 110 W 1. Value limited by wire bonding ■ 100% avalanche tested ■ Logic level drive Applications ■ Switching application – Automotive Description This device is an N-channel enhanc
6	STU95N2LH5	STMicroelectronics	N-channel Power MOSFET Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
7	STD95NH02L-1	STMicroelectronics	N-CHANNEL STripFET MOSFET Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc ■ Conduction losses reduced d ■ Switching losses reduced ro ■ Low threshold device 80A(1) 80A(1) te PDescription oleThe device is b
8	STB95N4F3	STMicroelectronics	N-channel Power MOSFET Order codes STB95N4F3 STD95N4F3 STP95N4F3 VDSS 40 V RDS(on) max. < 5.8 m Ω < 6.2 mΩ ID 80 A Pw 110 W ■ Standard threshold drive ■ 100% avalanche tested Applications ■ Switching applications – Automotive Description These devices are N-channel