No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
Dual N-channel Power MOSFET Type STL66DN3LLH5 VDSS 30 V RDS(on) max < 6.5 mΩ ID 20 A (1) 1 2 1. The value is rated according Rthj-pcb ■ ■ Logic level VGS(th) 175 °C junction temperature 3 4 PowerFLAT™ 5x6 double island Applications ■ ■ Switching applications Automotive Fi |
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STMicroelectronics |
5W+5W DUAL BRIDGE AMPLIFIER 266D ABSOLUTE MAXIMUM RATINGS Symbol Vs IO Ptot Top Tstg, Tj Supply Voltage Output Peak Current (internally limited) Total Power Dissipation (Tamb = 70°C Operating Temperature Storage and Junction Temperature Parameter Value 20 1.5 25 0 to 70 -40 to |
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STMicroelectronics |
Dual N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STL66DN3LLH5 30 V 6.5 mΩ 20 A 4.7 W Designed for automotive applications and AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature Wettable flanks package Applications Switching |
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