STMicroelectronics 604 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STPS6045C	STMicroelectronics	Power Schottky Rectifier  Very small conduction losses  Negligible switching losses  Extreme fast switching  Low thermal resistance  Avalanche capability specified STPS6045C Power Schottky Rectifier Datasheet - production data Description Dual center tap Schottky rec
2	STPS6045CW	STMicroelectronics	POWER SCHOTTKY RECTIFIER  Very small conduction losses  Negligible switching losses  Extreme fast switching  Low thermal resistance  Avalanche capability specified STPS6045C Power Schottky Rectifier Datasheet - production data Description Dual center tap Schottky rec
3	6045DV	STMicroelectronics	ESM6045DV e Datasheet http://www.datasheet4u.com/ ESM6045DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max M
4	RF2L36040CF2	STMicroelectronics	RF power LDMOS transistor Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-sourc
5	ESM6045DV	STMicroelectronics	NPN DARLINGTON POWER MODULE
6	STPS6045HR	STMicroelectronics	Aerospace 2 x 30 A - 45 V Schottky rectifier ■ ■ ■ ■ ■ ■ ■ ■ ■ Forward current: 2 x 30 A Repetitive peak voltage: 45 V Low forward voltage drop: 0.75 V Maximum junction temperature: 175 °C Negligible switching losses Low capacitance High reverse avalanche surge capability Hermetic package Targ
7	LET16045C	STMicroelectronics	RF power transistor • Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement-
8	L604	STMicroelectronics	DARLINGTON ARRAYS ys, filament lamps, thermal Oprintheads and high power buffers. ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEX Collector Emitter Voltage (input open) IC Collector Current IC Collector Peak Current Vi Input Voltage (for L603 and L604) Ptot Tot
9	STPS16045TV	STMicroelectronics	POWER SCHOTTKY RECTIFIER AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V(RMS) Capacitance = 45 pF DESCRIPTION Dual power Schottky rectifier suited for Swit
10	ESM6045AV	STMicroelectronics	NPN DARLINGTON POWER-MODULE 55 to 150 oC 150 oC September 2003 1/7 ESM6045AV THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.5 0.05 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase
11	TPS604	STMicroelectronics	POWER SCHOTTKY RECTIFIER AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: TOP-3I Insulating voltage = 2500VRMS Capacitance = 12pF DESCRIPTION Dual center tap Schottky rectifier suited for s
12	M36D0R6040T0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top
13	M36D0R6040B0	STMicroelectronics	64-Mbit Flash Memory and 16 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top
14	M36W0R6040T0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De
15	M36W0R6040B0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De
16	VNQ6040S-E	STMicroelectronics	Quad channel high-side driver • General – 16 bit ST-SPI for full and diagnostic – Programmable BULB/LED mode – Integrated PWM and phase shift generation unit – 160 Hz internal PWM fallback frequency – Advanced limp home functionalities for robust fail-safe system – Very low stand
17	ST16045	STMicroelectronics	28V RF Power LDMOS transistor Order code Frequency VDD POUT Gain Efficiency ST16045 1330 MHz 28 V 45 W 20 dB 55 % • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-sou
18	STTH60400HR	STMicroelectronics	Rad-Hard 60A - 400V ultrafast rectifier • Forward current: 60 A • Repetitive peak reverse voltage: 400 V • Low forward voltage drop: 1.15 V max. at 60 A and 125 °C • Negligible switching losses • High surge current capability: 500 A • Ceramic hermetic package • Tested radiation performance