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STMicroelectronics |
General-purpose dual bipolar timer ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from microseconds to hours ■ Operates in both astable and monostable modes ■ Output can source or sink up to 200 mA ■ Adjustable duty cycle ■ TTL compatible ■ Temperature |
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STMicroelectronics |
N-channel Power MOSFET Order code STW56NM60N ■ ■ ■ VDSS 600 V RDS(on) max < 0.06 Ω ID 45 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Applications ■ Switching applications Description This device is an N-channe |
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STMicroelectronics |
32-bit MCU+FPU • Core: ARM® 32-bit Cortex®-M7 CPU with FPU, adaptive real-time accelerator (ART Accelerator™) and L1 cache: 4KB data cache and 4KB instruction cache, allowing 0-wait state execution from embedded Flash memory and external memories, frequency up to |
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STMicroelectronics |
N-channel Power MOSFET 1 2 3 4 PowerFLAT™ 5x6 Order code STL56N3LLH5 VDS 30 V RDS(on) max 0.009 Ω • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss ID 56 A Applications • Switching applications Figure 1. Internal schematic diagr |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS at TJ max. STW56N60M2 650 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications • Switching applications Description This |
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STMicroelectronics |
General-purpose dual bipolar timer ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from microseconds to hours ■ Operates in both astable and monostable modes ■ Output can source or sink up to 200 mA ■ Adjustable duty cycle ■ TTL compatible ■ Temperature |
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STMicroelectronics |
32-bit MCU+FPU • Core: ARM® 32-bit Cortex®-M7 CPU with FPU, adaptive real-time accelerator (ART Accelerator™) and L1 cache: 4KB data cache and 4KB instruction cache, allowing 0-wait state execution from embedded Flash memory and external memories, frequency up to |
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STMicroelectronics |
N-channel Power MOSFET PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL56N3LLH5 30 V 9 mΩ 56 A • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S( |
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STMicroelectronics |
N-CHANNEL MOSFET Order code VDS STW56N60DM2 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected |
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STMicroelectronics |
N-CHANNEL MOSFET Order code VDS STW56N65DM2 650 V RDS(on) max. 0.065 Ω ID PTOT 48 A 360 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protecte |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS at TJ max. STW56N60M2 650 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications • Switching applications Description This |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS at TJ max. RDS(on) max. ID STW56N60M2-4 650 V 55 mΩ 52 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected • Excellent switching performance thanks to the extra |
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STMicroelectronics |
N-channel Power MOSFET Order code STW56N65M2 VDS 650 V RDS(on) max ID 0.062 Ω 49 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1. Internal schematic d |
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STMicroelectronics |
N-channel Power MOSFET 72 Figure 1. Internal schematic diagram 'UDLQ *DWH Order code STW56N65M2-4 VDS 650 V RDS(on) max ID 0.062 Ω 49 A • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellen |
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Desde 2024. D4U Semiconductor.
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