STMicroelectronics 45P Hoja de datos

No.	parte #	Fabricante	Descripción
1	45PE80	STMicroelectronics	M45PE80 SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single
2	M45PE40	STMicroelectronics	Page-Erasable Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single
3	STD45P4LLF6AG	STMicroelectronics	P-channel Power MOSFET Order code STD45P4LLF6AG VDS -40 V RDS(on) max. 15 mΩ ID -50 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Sw
4	STL45P3LLH6	STMicroelectronics	P-CHANNEL POWER MOSFET Order code STL45P3LLH6 VDS -30 V RDS(on) max 13 mΩ ID -45 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power